Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Anqing Teachers College(Natural Science Edition)》 2006-04
Add to Favorite Get Latest Update

The Response and Absorption Characters of the PC-type HgCdTe Detector to the Irradiation of In-band and Off-band

HU Chun-xiang,TAO Xiang-yang (School of Physics & Comm.Tech,Jiangxi Normal Univ.,Nangchang,330027,China)  
A series of outputs of the HgCdTe(PC) detector are observed when irradiated by CW 1 319nm laser and 10600nm laser respectively.The saturation threshold of the HgCdTe(PC) detector irriadiated by CW 1 319nm laser is given;some phenomena are observed when the HgCdTe(PC) detector is irradiated by off-band CW CO2 laser which is much different from that irradiated by in-band light;the ressults of measurement have been analyzed.Finally,the response character and absorption character of the PC-type HgCdTe detector to the irradiation of in-band and off-band are summarized respectively.
【CateGory Index】: TN215
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 SHI Lei,ZHAO Shang-hong,FANG Shao-qiang,XU Jie, ZHAN Sheng-bao,LI Yong-jun(Telecommunication Engineering Institution,Air Force Engineering University,Xi'an 710077,CHN);Researches on the Ring Focusing Performance of Laser Propulsion[J];Semiconductor Optoelectronics;2007-05
2 SHI Lei,ZHAO Shang-hong,ZHAN Sheng-bao,LI Yong-jun,FANG Shao-qiang,XU Jie(Telecommunication Engineering Institution,Air Force Engineering University,Xi'an 710077,CHN);Effects of Reflection Mirror's Surface Coarseness on Ring Focus Performance for Laser Propulsion[J];Semiconductor Optoelectronics;2007-06
3 ZHANG Qiang1,2,WANG Yuefeng1,HAN Yudong1,DUAN Xintao1,DONG Wei 1,HUANG Mingji 3,YIN Zhiyong1,JIA Wenwu1 (1.Department of Optics and Electronics,Ordnance Engineering College,Shijiazhuang 050003,CHN;2.Artillery Academy of PLA,Hefei 230031,CHN;3.Airforce Shijiazhuang Avionic Four Equipment Repair Plant,Shijiazhuang 050003,CHN);Simulation of Mixture Frequency Laser Irradiation on CCD Detectors[J];Semiconductor Optoelectronics;2010-05
4 WANG Qi-chun,HE Jian-guo(Microwave Center,Dept of Electronic Engineering,National UniversityDefence Technology,Changsha 410073, China);Design consideration of a new type of microwave photonic deviceMQW photon-microwave tansformer[J];Semiconductor Technology;2003-01
5 Yang Bingchu,Zhang Li,Ma Xuelong,Yan Jiantang (School of Physics Science and Technology,Central South University,Changsha 410083,China);Effects of Oxygen Pressure on Absorption Property and the Structure of Mn-Doped ZnO Thin Film[J];Semiconductor Technology;2008-02
6 Gao Fei1, Wu Zaihua1, Liu Xiaoyan2(1. Hunan College of Information, Changsha 410200, China; 2. School of Material Science and Engineering, Central South University, Changsha 410083, China);Preparation of ZnO/(Ni) Thin Film and Studies on Its Photoluminescence Properties[J];Semiconductor Technology;2008-08
7 Ding Guoqing(Wuhan Telecommunication Devices Cor,Wuchang 430074);Investigation of Photoluminescence Spectrum WithTensile Strained,Long Wavelength In_[1-x]Ga_xAs_yP_[1-y]/InPQuantum Well Materials[J];SEMICONDUCTOR TECHNOLOGY;1998-04
8 Chang Yong; Chu Junhao; Tang Wenguo; Shen Wenzhong and Tang Dingyuan (National Laboratory for Infrared Physics, Shanghai, Institute of Technical Physics, Shanghai 200083)Ye Runqing (Shanghai Institute of Technical Physics, Shanghai 200083);Spectroscopic and Electrical Investigation on Fe Doped Hg_(1-x)Cd_xTe[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-04
9 Sun Xiaoling, Yang Hui, Li Guohua, Zheng Lianxi, Li Jianbin, Wang Yutian, Wang Zhanguo(Institute of Semiconductors, The Chinese Academy of Sciences Beijing 100083)Received 8 October 1998, revised manuscript received 3 December 1998;Study of Optical Characteristics of Cubic GaN Grown on GaAs (001) by MOCVD[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-03
10 Huang Wanxia, Lin Libin(Department of Physics,Radiation & Technology Laboratory, Sichuan University, Chengdu\ 610064)Zeng Yiping, Pan Liang(Institute of Semiconductor, The Chinese Academy of Sciences, Beijing\ 100083)Received 6 November 1998, revised ma;Effects of Optic Character of GaAs/AlGaAs Multiple Quantum Well With Proton Irradiation[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-11
China Proceedings of conference Full-text Database 10 Hits
1 ;新颖高效的激光除锈技术[A];[C];2006
2 Jiang ke,Xie Jijiang,Zhang Laiming,Xu Dongdong State key laborary of Laser Interaction with Matter,Changchun Optics,Fine mechine and Physics,Chinese Academy of Sineces,Changchun130033,Jilin China;The Temperature Simulate of HgCdTe detector with Laser Interaction[A];[C];2010
3 DING Sheng~1,WANG Jian-guo~(1,2),WANG Yu-heng~1 (1.Northwest Institute of Nuclear Technology,Xi'an 710024,China) (2.Xi'an Jiaotong University,Xi'an 710049,China);Analysis on rupture for rotating cylinder shells with inner pressure irradiated by high energy laser beam[A];[C];2006
4 Luo Qun,Cheng Xiang-ai,Liu Pu,Rao Peng,Gan Qiu-guo (College of Optoelectric Science and Engineering,National University of Defense Technology,Changsha 410073);Study of Disturb Effect to Array CCD Detectors Irradiated by Supercontinuum Source[A];[C];2009
5 Zhang Lei Lu Qisheng Li Li (College of Optoelectric Science and Engineering,National University of Defense Technology, Changsha 410073,China);Experiment for combination of lasers radiate CdS and measurement for coupling coefficient[A];[C];2009
6 JIAO Lu-guang,ZHAO Guo-min,CHEN Min-sun (College of Photoelectric Science and Engineering,National University of Defense Technology,Changsha Hunan 410073,China);Investigation on the irradiation effect of Q235 steel by combined laser[A];[C];2009
7 Yangzining~[1]Liwenyu~[2]Chengxiang'ai~[2] photoelectric science and engineering academy of national university of defence technology;Study of PV HgCdTe detector irriated by femtosecond pulse laser in infrared wave length[A];[C];2009
8 PAN Hong-xing~1,WANG Chong~1,XIONG Fei~1,ZHANG Xue-gui~1, YANG Jie~(1,2),LI Tian-xin~3,YANG Yu~1 (1.Institute of Optoelectronic Information Materials,Academy of Engineering and Technology,Yunnan University,Kunming 650091,China; 2.Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China; 3.Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China);Influence of the growth temperature of Si buffer layers on Ge quantum dots[A];[C];2010
9 NAN Yao, JIA Xuan-jun, XIANG Shi-ming, YU Shuai Ji Xiao, Sang Peng, YANG Zhao-jin (School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081, China) (Xian Institute of Applied Optics, Xian 710065, China);Investigation of real temporal-spatial domain parameters measurement for single laser pulse[A];[C];2005
10 XIA Zhi-lin~(1,2) SHAO Jian-da~1 FAN Zheng-xiu~1 1 Shanghai Institution of Optics and Fine Mechanics,The Chinese Academy of Sciences,Shanghai 201800,China 2 Graduate School of the Chinese Academy of Sciences,Beijing 100039,China;Study of Thermal Conductivity of Lennard-Jones Materials by Molecular Dynamic Method[A];[C];2005
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved