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Investigation on Si_3N_4 films prepared on sapphire substrate

SONG Wen-yan, LIU Zheng-tang, CUI Hu,LI Qiang, ZHAO Tie-cheng (School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an 710072,China; N0.2 petroleum construction company of Si chuan, Chengdu 610213, China)  
Si3N4 thin films have been prepared by radio frequency magnetron reactive sputtering method on sapphire and silicon substrate in this article. The composition and construction of the Si3N4 films were investigated by XPS and FTIR. At the same time, the influences of experiment parameters, such as sputtering pressure and substrate temperature, on the deposition rate were discussed. The results were as follows: the deposition rate firstly increases with increasing sputtering pressure, and then decreases; the deposition rate reveals no obvious change with increasing substrate temperature; the excellent Si3N4 thin films can be prepared with decreasing sputtering pressure and increasing substrate temperature.
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