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《SEMICONDUCTOR OPTOELECTRONICS》 1999-02
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Surface structure of ZnS:Er~3+ ACEL thin films

LIU Zhaohong WANG Yujiang CHEN Mouzhi SUN Shunong LIU Reitang (Xiamen University,Xiamen 361005,CHN)$$$$  
Measurements of X-ray diffraction(XRD),X-ray photoelectron spectroscopy (XPS) and luminescence brightness are made for alternating current electroluminescent (ACEL) zinc sulfide thin film doped with erbium.The results show that the depositing polycrystalline films have a trend of preferred orientation, contamination are the main source of the occurrence of layers carbon and oxygen in the surface layer of the By using insulator layer with higher dielectric constant and lower resistivity, the quality of alternating current electroluminescen devices can be improved
【Fund】: 福建省自然科学基金
【CateGory Index】: TN304.250.55
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