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《SEMICONDUCTOR OPTOELECTRONICS》 2000-01
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Phase Change Procedure during Growth of HgCdTe Crystal by SSR Technique

WANG Yue 1,2 ,LI Quan bao 1,HAN Qing lin 1,SONG Bing wen 1,JIE Wan qi 2,ZHOU Yao he 2(1.Kunming Institute of Physics,Kunming 650223,China; 2.State Key Lab.of Solidification Processing,Northwest Polytechnical University,Xi'an 710072,China)$$  
The SSR(solid state recrystallization)technique for HgCdTe crystal growth is introduced,followed by description on phase change procedure during the growth of HgCdTe crystal by SSR technique.Mechanism of removing dendrite is discussed and experimental results are given.The drive force of phase change for HgCdTe growth during recrystallization is briefly described.
【CateGory Index】: TN304.054
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