Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Semiconductor Optoelectronics》 2001-01
Add to Favorite Get Latest Update

Recent Progress in Wide Bandgap GaN-based Semiconductor Laser Diodes

ZHANG Bei (State Key Laboratory for Mesoscopic Physics, Dept. of Physics, Peking University, Beijing 100871, China)$$$$  
The wide bandgap Ⅲ-nitride-based semiconductors are the most active semiconductor material systems during the past few years of the 20th centrury. GaN-based superbright light emitting diodes and injection laser diodes have been commercialized since their invention with an incredible quick pace. In this paper, market demands of GaN-based semiconductor lasers is outlined, along with description of research and development on nitride-based laser grown on sapphire substrates, as well as their recent research hot spot.
【Fund】: 国家自然科学基金!资助项目 (197740 0 8;6 9896 2 6 0 ) ;; 集成光电子国家重点实验室开放课题
【CateGory Index】: TN248.4
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 2 Hits
1 MA Li-na, GUO Xia, SHEN Guang-di(Beijing Optoelectronic Technology Lab.,Beijing University of Technology,Beijing 100022,CHN);Research Progress in Etching of Group-Ⅲ Nitride Material[J];Semiconductor Optoelectronics;2005-04
2 NIU Ping-juan1,CHEN Nai-jin1,LI Yang-xian2,GUO Wei-lian3(1.School of Information and Communication,Tianjin Polytechnic University,Tianji n 300160,China;2.Material School,Hebei University of Technology,Tianjin 300130,China;3.School of Electronic Information Eng,Tianjin University,Tianjin 300072,China);Investigation on GaN-based semiconductor optoelectronic material and device[J];Micronanoelectronic Technology;2004-12
China Proceedings of conference Full-text Database 1 Hits
1 XIE Wenqing1,2 XU Yunhua2 ZHANG Song2 KANG Yong2 LI Xue2, FANG Jiaxiong2 HUANG Jianfeng3 LI Xingren3 2State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083 3 Shanghai Hualong Information Technology Development Center, Shanghai, 201206;Impact of Integration Time and Integration Capacitance on Performance of UV FPA[A];[C];2004
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 JIANG Rong-hua; XIAO Shun-zhen; LI Yan; (Ermei Semiconductor Material Research institute, Ermeishan 614200, China);Research development of nitride semiconductor[J];Semiconductor Technology;2000-06
2 Zhang Jincheng,Ma Xiaohua,Hao Yue,Fan Long and Li Peixian(Institute of Microelectronics,Xidian University,Xi'an 710071,China);An Analytic Low Field Electron Mobility Model of Wurtzite GaN[J];Chinese Journal of Semiconductors;2003-10
3 Wen Shumin 1,2 and Ban Shiliang 1, (1 Department of Physics,College of Sciences and Technology,Inner Mongolia University,Hohhot 010021,China) (2 Jining Teachers College,Wulanchabu 012000,China);Screening Influence on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure[J];Chinese Journal of Semiconductors;2006-01
4 Zhao Fengqi and Sarula(College of Physics and Electron in Information,Inner Mongolia Normal University,Hohhot 010022,China);Binding Energy of a Hydrogenic Impurity in a Finite Parabolic Quantum Well Under an External Electric Field[J];Chinese Journal of Semiconductors;2006-05
5 ZHENG Xiao-qiu,LU Yan-wu(School of Sciences,Beijing Jiaotong University,Beijing 100044,China);Far-Infrared Quantum Cascade Lasers Based on Nitride Semiconductor Materials[J];Journal of Northern Jiaotong University;2005-06
6 ;New Advancement And Developmental Trend Of Nanometer Optoelectronic Devices[J];Sensor World;2005-03
7 LI Chao-rong,L Wei,ZHANG Ze(Beijing Laboratory of Electron Microscopy, Institute of Physics, Chinese Academy of Sciences, Beijing100080);Influence of misfit strain state on microstructure and physical properties of InGaN/GaN multiple quantum well structures[J];Journal of Chinese Electron Microscopy Society;2005-01
8 LI Ya-li, XIAO Jing-lin (College of Physics and Electromechanics, Inner Mongolia National University, Tongliao 028043, China);Ground State Binding Energy of Strong Coupling Polaron in a Infinite Quantum Well[J];Chinese Journal of Luminescence;2005-04
9 LIU Wei-hua,XIAO Jing-lin(Department of Physics and Electromechanics,Inner Mongolia National University,Tongliao 028043,China);Mean Number of Phonons of Polaron in Quantum Well[J];Chinese Journal of Luminescence;2005-05
10 YUAN Li-hua~1,WANG Xu~2,AN Zhang-hui~3,MA Jun~1(1. School of Science,Lanzhou University of Technology,Lanzhou 730050,China;2.Department of Physics,NeiMongo University,Hohhot 010021,China;3.Lanzhou Institute of Seismology,CEA,Lanzhou 730000,China);Polarization Potential and the Binding Energy of a Bound Polaron in a Parabolic Quantum Well[J];Chinese Journal of Luminescence;2005-06
【Secondary References】
China Proceedings of conference Full-text Database 1 Hits
1 XIE Wen-qing, XU Yun-hua, ZHANG Song, FANG Jia-xiong (State Key Lab. of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, CHN);CMOS Readout Circuit with 9-stage Time Delay and Integration[A];[C];2004
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved