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《Semiconductor Optoelectronics》 2001-03
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Application of Electron Trapping Material to Optical Storage Technology

FAN Wen-hui 1 , YE Kong-dun 2, GUANG Xin 3 , ZHU Jian 1, WANG Yong-chang 1 (1 Institute of Modern Physics, Faculty of Science, Xi’an Jiaotong University, Xi’an 710049, China; 2. Anqing Normal College, Anqing 246003, China; 3. Schoo  
The optical storage mechanism is analyzed in detail according to the energy-level structure of electron-trapping material. Based on a series of experiments on writing/reading/erasing and addition/subtraction of images, the optical storage dynamics of electron-trapping material is discussed. The dependence of intensity on the emission light, stimulation light and excitation light of electron-trapping material is investigated. It is shown that electron-trapping material has such attractive advantages as high speed, high density and long life time, which will ensure a brighter future for its application in optical data storage and optical information processing.
【Fund】: 国家自然科学基金资助项目! (6 99780 18) ;; 西安交通大学科研基金;; 理科基金资助项目
【CateGory Index】: TP333
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