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《Semiconductor Optoelectronics》 2001-03
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Optimization of Growing and Annealing Parameters by XRD

WANG Jin-zhong1, YAN Wei1, WANG Xin-qiang1, YIN Jing-zhi1, JIANG Xiu-ying1, YANG Shu-ren1, DU Guo-tong1, GAO Ding-shan1, Xiang Liu2, Hui Cao2, Junying Xu2, R.P.H.Chang2 (1. National Integrated Optoelectronics Lab., Dept. of Electron  
ZnO films are grown on (001) sapphire substrate by plasma-assisted MOCVD. After investigation and analysis of the samples by XRD, the growing and annealing parameters are optimized and high-quality ZnO film with 0.15° FWHM is obtained. Moreover, it is found that there is tensile stress in the samples doped with nitrogen or resulting from annealing for many times during the growing process, while compressive stress will occur in the samples annealing for only once after growth.
【Fund】: 国家自然科学基金资助项目! (6 9896 2 6 0 5 9910 16 1983);; 吉林省科学基金资助项目! (19990 5 18- 1)
【CateGory Index】: TN304.055
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