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《Semiconductor Optoelectronics》 2002-06
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Studies of ZnO films XPS

WANG Jin zhong, YANG Xiao tian, ZHAO Bai jun, ZHANG Yuan tao, LIU Da li, WANG Hai song, YANG Shu ren, DU Guo tong (State key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, CHN)  
The as grown, ZnO films annealed after growth and annealed during growth(denoted as S1, S2 and S3, respectively) were grown on C plane sapphire substrate by plasma enhanced MOCVD and characterized by XRD and X ray photoelectron energy spectra. The results show that the quality of the sample annealed during growth is the best, the O/Zn ratio (0.94) is relatively high, and the influence of oxygen and water vapour on S3 is the weakest.
【Fund】: 国家自然科学基金资助项目 (5 9910 16 1983 6 0 176 0 2 6 6 0 1770 0 7) ;; “ 86 3”科技计划资助项目 (2 0 0 1AAA31110 )
【CateGory Index】: TN304.05
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【References】
Chinese Journal Full-text Database 1 Hits
1 GUO Ai-bo,LIU Yu-ping,CHEN Feng,LI Bin,DAN Min,LIU Ming-hai,HU Xi-wei(College of Electrical & Electronics Engineering,Central China University of Science and Technology,Wuhan 430074,China);Research of ZnO Thin Films Grown by Plasma-enhanced Chemical Vapor Deposition[J];Surface Technology;2006-06
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 CAI Xian ti, HUANG Qi jun, HUANG Hao, MENG Xian quan, GUO Huai xi, FAN Xiang jun (Dept. of Physics,Wuhan University, Wuhan 430072, China)$$$$;GaN Films Grown by RICBD on Si Substrate[J];Semiconductor Optoelectronics;2001-01
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4 Li Jianguang, Ye Zhizhen, Wang Lei, Zhao Binghui, Yuan Jun, Que Duanlin(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Received 3 May 1998, revised manuscript received 12 June 1998;Characterization of ZnO Thin Film Treated With High Temperature for Buffer Layer of GaN on Silicon Substrate[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-10
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6 Yang Chengxing,Ji Zhenguo,Liu Kun,Fan Ruixin and Ye Zhizhen(State Key Laboratory of Silicon Material,Zhejiang University,Hangzhou 310027,China);Electrical and Optical Properties of Zinc Oxide Films Prepared by Pyrolysis of Zinc Acetate[J];Chinese Journal of Semiconductors;2002-10
7 Huang Shulai 1,Ma Jin 1,Liu Xiaomei 2,Ma Honglei 1,Sun Zheng 1 and Zhang Deheng 1(1 School of Physics and Microelectronics,Shandong University,Ji'nan 250100,China) (2 School of Computer,Shandong University,Ji'nan 250100,China);Preparation and Properties of Conducting Transparent ZnO-SnO_2 Films Deposited at Room Temperature[J];Chinese Journal of Semiconductors;2004-01
8 Liu Wei,Gu Shulin,Ye Jiandong,Zhu Shunming,Qin Feng,Zhou Xin,Liu Songmin, Hu Liqun,Zhang Rong,Shi Yi and Zheng Youdou(Department of Physics,Nanjing University,Nanjing 210093,China);LP-MOCVD Growth and Properties of Zn_(1-x) Mg_xO Thin Film[J];Chinese Journal of Semiconductors;2004-07
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10 WANG Min, MENG Ji-long(Department of Mechano - electronic Engineering, South China University of Technology, Guangzhou 510640, China);Development of Transparent Conductive Oxide Films[J];Surface Technology;2003-01
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 MIAO Juan1,ZHANG Cheng-guang1,FU De-xue2(1.Henan Polytechnic University,Jiaozuo 454000,China;2.Jiaozuo University,Jiaozuo 454100,China);Study on Electodeposition Condition of ZnSe Thin Film[J];Surface Technology;2008-04
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