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《Semiconductor Optoelectronics》 2004-05
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The Dark Current Characteristics of InGaAs PIN Photodetectors

HAO Guo-qiang, ZHANG Yong-gang, LIU Tian-dong, LI Ai-zhenhai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai 200050,C HN)  
The dark current characteristics of In_(0.53)Ga_(0.47)As PIN photodetectors at different doping concentrations and reverse bias voltages have been researched theoretically,and compared with the measured results of our fabricated devices.Results show that the dart currents are dominated by generation-recombination mechanism at lower bias,whereas dominated by tunneling effects at higher bias,and the carrier concentration in the In_(0.53)Ga_(0.47)As absorption layer plays an important role.The simulated results are consistent with the measured ones entirely.The influence of junction area and bonding pad size on the dark current has been also analyzed.
【Fund】: 国家"973"计划资助项目(G20000683)
【CateGory Index】: TN29
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