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《Semiconductor Optoelectronics》 2005-02
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Life Test and Failure Mechanism Analyses for High -power LED

ZHENG Dai-shun1, QIAN Ke-yuan1, LUO Yi(1,2) (1. Laboratory on Semiconductor Lighting,Graduate School at Shenzhen,Tsinghua University,Shenzhen 518055,CHN; 2. State Key Laboratory on Integrated Optoelectronics,College of Electr onic Engineering,Tsinghua University,Beijing 100084,CHN)  
High-power blue light -e mitting diodes were fabricated with the blue LED chips as primary light source,a nd high-power white LEDs were fabricated by phosphor conversion.Life of high-p ower blue and white LEDs was measured,and the failure mechanism was investigated . Results show that the light output of LEDs degrades exponentially with the tim e,the growth of defects and formation of nonradiative recombination centers, qua ntum efficiency reduction of phosphor, the destroy of static electricity, breaka ge of metallization layer and solder instability for flip-chip, and mechanical stress within the LED package caused by the variations in ambient temperature an d self-heating,and so on,will result in the failure for high-power LEDs.
【CateGory Index】: TN312.8
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