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《Semiconductor Optoelectronics》 2007-03
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Properties of SnO_2 Polycrystalline Thin Films Prepared by Magnetic Reactive Sputtering

YAO Fei-fei,FENG Liang-huan,CHEN Wei-dong,LEI Zhi,ZHANG Jing-quan,LI Wei,WU Li-li,CAI Wei,CAI Ya-ping,ZHENG Jia-gui,LI Bing(Department of Materials Science,Sichuan University,Chengdu 610064,CHN)  
SnO2 polycrystalline thin films were prepared by magnetic reactive sputtering.The structural,optical and electrical properties of the films before and after annealing were studied.X-ray diffraction results show that the films annealed at 510 ℃ for 1 h are polycrystalline SnO2 with a single phase of tetragonal structure.Optical transmission measurements yield optical band gaps between 3.79 eV to 3.92 eV.The resistivity of an annealed film is 8.5 Ω·cm and its activation energy of conductivity is 0.322 eV,deriving from the relation of dark conductivity vs temperature.The results show that SnO2 high resistant films grown by this method could be used in CdTe solar cells as the buffer layer.
【Fund】: 国家“863”计划资助项目(2003AA513010)
【CateGory Index】: TN304.05
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