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《Semiconductor Optoelectronics》 2007-03
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Preparation and Characteristics of ZnO∶Al Thin Films Prepared by Sol-gel Technique

HONG Wei-ming(Zhanjiang Normal College,Zhanjiang 524048,CHN)  
ZnO∶Al thin films with interconnected chainlike morphology doped with different aluminum concentrations were deposited on(0001) sapphire substrates by sol-gel spin-coating technique.SEM micrographs showed that the concentrations of doped aluminum had pronounced influence on the growth of interconnected chains.X-ray diffraction patterns showed that(002) peak intensified with increasing the concentration of doped aluminum.The optical band gaps of all samples increased due to Burstein Moss effect with increasing aluminum concentration.Calculated band gap ranged from 3.21 eV to 3.25 eV.Photoluminescence spectra showed ultraviolet peaks located at 390 nm for all three samples.Besides ultraviolet peaks,two blue peaks located at 415nm and 440nm,which were attributed to the emission of Zn vacancies and Zn interstitials,were observed.Experimental results and relative mechanisms had been discussed in this paper.
【CateGory Index】: TN304.05
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