Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Semiconductor Optoelectronics》 2008-04
Add to Favorite Get Latest Update

Effects of Annealing Time on Properties of ZnO:Al Thin Films Formed by Sol-gel Technique

YUAN Zhao-lin1,ZU Xiao-tao1,2,XUE Shu-wen1,LI Xu-ping1,XIANG Xia1,WANG Bi-yi1,TIAN Dong-bin1,DENG Hong3,MAO Fei-yan3(1.School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,CHN;2.International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110015,CHN;3.School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,CHN)  
ZnO∶Al thin films doped with 0.1% aluminum(Al/Zn=0.1%) were deposited on quartz glass by the sol-gel technique.The as-prepared sample is annealed in argon ambient at 500 ℃ and annealing time is varied between 1 and 5 h.The effects of different annealing time on the properties of ZnO∶Al thin films were investigated by X-ray diffraction(XRD),photoluminescence(PL),optical transmittance and four-probe method.Results show that when annealing time is 1 h,the sample exhibits preferred c-axis orientation,DLE is enhanced,the optical transmittances is about 80% in the visible region and the resistivity of the sample is only 4×10-2 Ω·cm.When annealing time exceeds 1 h,the crystal quality becomes poor and the resistivity is increased continuously with increasing annealing time.
【Fund】: 高等学校博士点科研基金资助课题(20050614013);; 教育部新世纪优秀人才支持计划资助课题(NCET-04-0899)
【CateGory Index】: O484.41
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 1 Hits
1 LIU Chaoying,ZUO Yan,XU Jie(Research Institute of Glass Science,China Building Materials Academy,Beijing 100024);Research Progress of Transparent Conductive Aluminum-doped Zinc Oxide Films[J];Materials Review;2010-19
Chinese Journal Full-text Database 1 Hits
1 XU Zi-qiang~(1,2),DENG Hong~2,XIE Juan~2,LI Yan~2,CHEN Hang~2,ZU Xiao-tao~3,XUE Shu-wen~3(1.Research Institute of University of Electronic Science and Technology of China,Chengdu 610054,China;2.School of Microelectronics and Solid-State Electronics,University of Electronic Science andTechnology of China,Chengdu 610054,China;3.School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China);Effect of annealing on photoluminescence of ZnO: Al thin films prepared by sol-gel method[J];High Power Laser and Particle Beams;2006-01
Chinese Journal Full-text Database 3 Hits
1 HE Ying,WANG Chang-zheng,ZHANG Pei-ming,ZHANG Dong(School of Physical Science and Information Engineering,Liaocheng University, Liaocheng,Shandong 252059,China);The Impact of Substrate Temperature upon ZnO Thin Film Structure and Photoluminescence[J];Journal of Guangxi Teachers Education University(Natural Science Edition);2009-01
2 XU Dong-ran,XIAO Xiao-guang,WANG Chang-zheng,ZHANG Yi-qing,ZHANG Dong,GAO Xue-xi,LIU Yun-long(School of Physics Science and Information Engineering,Liaocheng University,Liaocheng 252059,China);Influence of annealing and supersonic treatments on structure and photoluminescence of ZnO films[J];High Power Laser and Particle Beams;2007-08
3 Fang Qing-Qing Wang Wei-Na Zhou Jun Wang Sheng-Nan Yan Fang-Liang Liu Yan-Mei Li Yan Lü Qing-Rong(Key Laboratory of Opto-electronic Information Acquisition of Ministry of Education,School of Physics and Material Science,Anhui University,Hefei 230039,China);Photoluminescence characteristics of Zn_(1-x) Mg_xO films[J];Acta Physica Sinica;2009-08
Chinese Journal Full-text Database 8 Hits
1 GE Chun-qiao, XUE Yi-yu, HU Xiao-feng, GUO Ai-yun(Department of Material Science, Huazhong University of Science and Technology,Wuhan 430074, China);Optimum Design of the Technological Parameters for the Preparation of AZO Thin Films by Sol-Gel[J];Semiconductor Technology;2005-05
2 WANG Min, MENG Ji-long(Department of Mechano - electronic Engineering, South China University of Technology, Guangzhou 510640, China);Development of Transparent Conductive Oxide Films[J];Surface Technology;2003-01
3 Wang Peng Zhao Qingnan Zhou Xiang Zhao Xiujian (Key Laboratory for Silicate Materials Science and Engineering of Ministry of Education,Wuhan University of Technology,Wuhan 430070,China);Influence of Homo-Buffer Layer Thickness on the Structure and Optical and Electric Properties of AZO Thin Films Prepared on Glass Substrates by Magnetron Sputtering[J];Rare Metal Materials and Engineering;2007-S3
4 DAI Jielin (Department of Physics and Electronic Engineering, Hefei Teachers College, Hefei 230061, China);Characterization of surface morphology for Al-doped ZnO thin films prepared by sol-gel method[J];Electronic Components and Materials;2009-07
5 Meng Yang Shen Jie Jiang Yiming Chen Yi Kong Lingzhu Wo SongtaoYang Xiliang Chen Huaxian Zhang Zhuangjian (Department of Materials Science, Fudan University, Shanghai, 200433);New Progress of Transparent Conductive Oxide Thin Films[J];Optoelecfronic Technology;2002-03
6 GE Shuibing 1,CHENG Shanhua 1,NING Zhaoyuan 1,SHEN Mingraong 1, GAN Zhaoqiang 1,ZHOU Yongdong 1,CHU Junhao 2 (1.Films Material Laboratory of Suzhou University,Suzhou,215006,China; 2.Shanghai Institute of Technical Physics,Chinese Academy of Scie;Effects of Oxygen Pressure and Substrate Temperature on ZnO∶Al Film by Pulsed Laser Deposition[J];JOURNAL OF FUNCTIONAL MATERIALS;2000-S1
7 CHEN Wen-wen,LV Jun,WANG Jian-min,TANG Wen-ming,LIU Jun-wu,WU Yu-cheng,ZHENG Zhi-xiang(Material Department of Science and Engineering,Hefei University of Technology,Hefei 230009,China);INFLUENCE OF ANNEALING ON PROPERTIES OF AZO THIN FILMS PREPARED BY SOL-GEL METHOD[J];Physical Testing and Chemical Analysis(Part A:Physical Testing);2007-02
8 Chen Zhao-Quan Liu Ming-Hai Liu Yu-Ping Chen Wei Luo Zhi-Qing Hu Xi-Wei(Key Laboratory of Fusion and Advanced Electromagnetic Technology of Ministry of Education,College of Electrical & Electronic Engineering,Huazhong University of Science and Technology,Wuhan 430074,China);Fabrication of transparent conductive AZO (ZnO:Al) film by plasma enhanced chemical vapor deposition[J];Acta Physica Sinica;2009-06
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 WANG Xu-dong, HE Shi-yu, YANG De-zhuang (Space Materials & Environment Engineering Labortary, Harbin Institute of Technology, Harbin 150001, China);Electron flux effects on the optical properties of ZnO/K_2SiO_3 thermal control coating[J];High Power Laser & Particle Beams;2002-03
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved