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《Semiconductor Optoelectronics》 2008-04
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Effects of Annealing Time on Properties of ZnO:Al Thin Films Formed by Sol-gel Technique

YUAN Zhao-lin1,ZU Xiao-tao1,2,XUE Shu-wen1,LI Xu-ping1,XIANG Xia1,WANG Bi-yi1,TIAN Dong-bin1,DENG Hong3,MAO Fei-yan3(1.School of Physical Electronics,University of Electronic Science and Technology of China,Chengdu 610054,CHN;2.International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110015,CHN;3.School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,CHN)  
ZnO∶Al thin films doped with 0.1% aluminum(Al/Zn=0.1%) were deposited on quartz glass by the sol-gel technique.The as-prepared sample is annealed in argon ambient at 500 ℃ and annealing time is varied between 1 and 5 h.The effects of different annealing time on the properties of ZnO∶Al thin films were investigated by X-ray diffraction(XRD),photoluminescence(PL),optical transmittance and four-probe method.Results show that when annealing time is 1 h,the sample exhibits preferred c-axis orientation,DLE is enhanced,the optical transmittances is about 80% in the visible region and the resistivity of the sample is only 4×10-2 Ω·cm.When annealing time exceeds 1 h,the crystal quality becomes poor and the resistivity is increased continuously with increasing annealing time.
【Fund】: 高等学校博士点科研基金资助课题(20050614013);; 教育部新世纪优秀人才支持计划资助课题(NCET-04-0899)
【CateGory Index】: O484.41
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Chinese Journal Full-text Database 1 Hits
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