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《Semiconductor Technology》 2001-02
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Copper interconnections for IC and studies on related problems

SONG Deng-yuan, ZONG Xiao-ping, SUN Rong-xia, WANG Yong-qing (College of Electronic & Information Engineering, Hebei University, Baoding 071002, China)  
The advantages, challenges, and process solutions for copper to replace aluminum as interconnect metal are presented. The fabrication flow of Cu patterning by the dual-damascene process and related key technologies are described. Cu barrier materials and rules in which the barriers are chosen are discussed.The current status of low-k dielectrics used in interconnect system are also given briefly.
【CateGory Index】: TN405.97
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