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Optical proximity correction for improving pattern quality in submicron photolithography

SHI Rui-ying, GUO Yong-kang (Phys. Dept. Sichuan University, Chengdu 610064 China; Microelectronics Center, Academia Sinica, Beijing 100010, China)  
In this paper, the development of optical proximity correction technique is preserted. The various methods of optical proximity correction for improving the lithography pattern quality are discussed. The function and the position of optical proximity correction on lithography technology in future are analyzed.
【Fund】: 中科院光电所做细加工光学技术国家重点实验室基金 ;;国家自然科学基金项目编号!(69907003) ;;教育部博士点基金资助项目
【CateGory Index】: TN305.7
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