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《Semiconductor Technology》 2002-07
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Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs

XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China)  
The annealed behaviors of the deep level trap in LEC SI-GaAs are investigated in thispaper. The changes of the deep level trap in SI-GaAs single crystal in different annealed conditionshave been compared. The reasons of the change have been analysis. The probably microscopic struc-tures of the two main deep level trap EL2 and EL6 in the LEC SI-GaAs are discussed.
【CateGory Index】: TN304.23
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Xie Zili (Nanjing Electronic Device Institute,Nanjing 210016);EL2 Defect and Its Annealing in In Doped GaAs Single Crystal[J];SEMICONDUCTOR TECHNOLOGY;1999-03
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8 Xu Yuesheng 1,Zhang Chunling 1,Liu Caichi 1,Tang Lei 1,Wang Haiyun 1 and Hao Jingchen 2(1 Information Function Institute,Hebei University of Technology,Tianjin 300130,China) (2 The 13th Electrons Institute of the Ministry of Information Industry,Shijiazhuang 050051,China);Crystal Defects in Semi-Insulation Gallium Arsenide[J];Chinese Journal of Semiconductors;2003-07
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