Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Semiconductor Technology》 2002-07
Add to Favorite Get Latest Update

Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs

XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China)  
The annealed behaviors of the deep level trap in LEC SI-GaAs are investigated in thispaper. The changes of the deep level trap in SI-GaAs single crystal in different annealed conditionshave been compared. The reasons of the change have been analysis. The probably microscopic struc-tures of the two main deep level trap EL2 and EL6 in the LEC SI-GaAs are discussed.
【CateGory Index】: TN304.23
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 1 Hits
1 Xie Zili (Nanjing Electronic Device Institute,Nanjing 210016);EL2 Defect and Its Annealing in In Doped GaAs Single Crystal[J];SEMICONDUCTOR TECHNOLOGY;1999-03
Chinese Journal Full-text Database 10 Hits
1 HUANG Yunian(Beijing Institute of Applied Physics and Computational Mathematics, Beijin 100088, CHN);High power microwave generation using photoconductive semiconductor switches[J];SEMICONDUCTOR OPTOELECTRONICS;1998-02
2 HOU Jun-yan1,DAI Hui-ying1,2 , SHI Wei2,DONG Qiu-Xia1 ( 1. Science Institute, Air Force Engineering University, Xi' an 710051, China; 2. Department of Applied Physics, Xi' an University of Technology, Xi' an 710048, China);Compare of Scattering Mechanisms in SI GaAs Photoconductive Switch[J];Semiconductor Technology;2006-12
3 Zhang Ronggui, Li Anping(The 13th Institute, Ministry of MEI, Shijiazhuang, 050051);Photoluminescence Spectra and Quality Characterization of SI-GaAs[J];;1993-03
4 Sun Niefeng,Chen Xudong,Zhao Youwen, Yang Guangyao,Liu Silin,Sun Tongnian (Hebei Semiconductor Research Institute,Shijiazhuang 050051);Investigation on progress of InP Crystal in Application[J];SEMICONDUCTOR INFORMATION;1998-04
5 Chen Nuofu/Hebei Institute of Technology.Tianjin,300130;A New Method for Revealing Defects in GaAs/AlGaAs——Ultrasonic Aided AB Etching[J];Chinese Journal of Semiconductors;1992-12
6 Lai Zhanping, Qi Dege, Gao Ruiliang, Du Gengna, Liu Yanfeng, Liu Jianning(The 46 th Institute, The Ministry of Electronic Industry, Tianjin\ 300220)Received 9 May 1998, revised manuscript received 25 March 1999;Electricity Compensation of Semi-Insulating GaAs[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-11
7 SHI Wei1, ZHAO Wei2, SUN Xiao\|wei3 and Lam Yee Loy\+3(1\ Applied Physics Department, Xi'an University of Technology, Xi'an\ 710048, China) (2\ State Key Laboratory of Transient Optics and Technology, Xi'an\ 710068, China) (3\ Division of Microelectroni;Transit Properties of High Power Ultra\|Fast Photoconductive Semiconductor Switch[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-05
8 Xu Yuesheng 1,Zhang Chunling 1,Liu Caichi 1,Tang Lei 1,Wang Haiyun 1 and Hao Jingchen 2(1 Information Function Institute,Hebei University of Technology,Tianjin 300130,China) (2 The 13th Electrons Institute of the Ministry of Information Industry,Shijiazhuang 050051,China);Crystal Defects in Semi-Insulation Gallium Arsenide[J];Chinese Journal of Semiconductors;2003-07
9 Shi Wei and Tian Liqiang(Department of Applied Physics,Xi'an University of Technology,Xi'an 710048,China);Breakdown Characteristics of Semi-Insulating GaAs Photoconductive Switch[J];Chinese Journal of Semiconductors;2004-06
10 Shi Wei,Dai Huiying,and Zhang Xianbin(Department of Applied Physics,Xi’an University of Technology,Xi’an 710048,China);Peculiar Photoconduction in Semi-Insulating GaAs Photoconductive Switch Triggered by 1064nm Laser Pulse [J];Chinese Journal of Semiconductors;2005-03
【Secondary Citations】
Chinese Journal Full-text Database 3 Hits
1 Xia Deqian, Chen Hongyi (Nanjing Electronic Devices Institute);Investigation for SI GaAs Single Crystal Growth[J];Research & Progress of Solid State Electronics;1987-01
2 Wang Ziliang, Chen Yigang, Shao Kai, Cao Chunhai Guo Haizhou, Zhu He, Shen. Haoying (Nanjing Solid State Devices Research Institute);Research on Y-Ba-Cu-0 High Temperature Superconductive Material[J];Research & Progress of Solid State Electronics;1988-03
3 Sun Liangquan.Jin Nengyun (Materials Sci. Dept. .Shanghai Jiaotong Univ. .200030) Shi Changxin (Microelectronic Tech. Research Institute,Shanghai Jiaotong Univ. ,200030);The Effects of Thermal Annealing on the Inhomogeneity Across GaAs Wafers[J];Research & Progress of Solid State Electronics;1992-02
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved