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Latest progresses and developments of DRAM fabrication

CHENG Li, WANG Zhen-yu, GAO Ping(Institute of Electricity & Information, Jiangsu University, Zhenjiang 212013, China)  
Firstly the novel VLSI fabrications, the breakdown of 0.1mm dimension limit and itsprogresses of several novel technologies are introduced in details, and the developments and pros-pects of FRAM, phase change RAM and MRAM are also summarized.
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