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《Semiconductor Technology》 2004-09
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Progress of Electromigration in IC Interconnect Metallic Line

WU Feng-shuna,b, ZHANG Jing-songa, WU Yi-pinga,b,ZHENG Zong-lina, WANG Lei1 , QIAO Kai1a(Huazhong Univ. of Science & Technology a. State Key Lab. of Plastic Forming Simulation & Die Technology;b. Institute of Microsystems, Wuhan 430074,China)  
With the development of large-scale integrated circuits, the reliability caused byelectromigration becomes a key issue. The fundamental of electromigration is introduced. The recentprogress in research on electromigration is overviewed. The results show that the size, shape andmicrostructure of interconnect metallic line play an important role in the process of electromigration.Also the temperature, current density, stress gradient and alloy elements have strongly effects onMTF (mean time to failure) of electromigration. Finally, the imminent issues of electromigration havebeen presented.
【Fund】: 国家863计划重点项目(2002AA404110);; 中港自然科学基金委(NSFC);; 香港研究资助局(RGC)联合资助项目(60318002)
【CateGory Index】: TN402
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