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《Semiconductor Technology》 2005-01
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Study of ECR-plasma Cleaning and Nitridation of Sapphire Substrate Using RHEED

LANG Jia-hong, GU Biao, XU Yin, QIN Fu-wen, QU Gang (State Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology,Dalian 116024, China; School of Electrical Engineering & Information , Anhui University of Technology Maanshan 243002, China )  
The normal cleaning effect and nitridation effect of hydrogen and nitrogen ECR plasma for sapphire substrates were researched by analyzing RHEED image in ECR-PEMOCVD system, The results indicated that much difference exists for surface quality of sapphire substrate by normal cleaning. Cleaning for 30 min for some substrates is insufficient and the multi-step cleaning is needed; Sufficiently cleaned sapphire substrates was nitrided for 20 min by ECR hydrogen and nitrogen plasma and smooth and clear nitridation layer can be obtained, while insufficiently cleaned ones cannot be nitrided for 20 min or longer.
【Fund】: 国家自然科学基金自助项目(69976008)
【CateGory Index】: TN304.05
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