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《Semiconductor Technology》 2005-06
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Study on Reactive Ion Etching of Silicon in SF_6/O_2/CHF_3 Mixtures

ZHOU Hong a , LAI Jian-jun a,b , ZHAO Yue a , KE Cai-jun a,b , ZHANG Kun 2 , YI Xin-jian a,b (1.a.Department of Optoelectronic Engineering;b.The State Key Laboratory of Laser Technology, Huazhong University of Science and Technology, Wuhan 430074, China; 2.The 44th Electronic Research Institute, Chongqing 400060,China)  
RIE of Si using SF 6 /O 2 /CHF 3 plasmas was studied. The characteristics of the etch process are explored using a statistical experimental design. Etch rate and selectivity are examined as a function of SF 6 flow, O 2 flow, CHF 3 flow, pressure and the RF power in order to optimize etching condition. The effects of the variables on the measured responses and the etch mechanism are discussed. It is found that the addition of CHF 3 to the SF 6 /O 2 plasma can produce more smooth etch surface.
【Fund】: 中国博士后研究基金(2002031254)
【CateGory Index】: TN304.12
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