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《Semiconductor Technology》 2005-06
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Simulation Analysis on Low Resistance p-type DBR Structure

MA Li-na, GUO Xia, GAI Hong-xing, QU Hong-wei, DONG Li-min, DENG Jun, LIAN Peng, SHEN Guang-di (Institute of Electronic Information and Engineering, Beijing University of Technology & Beijing Optoelectronic Technology Lab, Beijing, 100022, China)  
The low series resistance graded DBRs structures are designed. The effects on valance band of p-type graded DBRs are simulated and compared. Moreover, the effects of grading profile, graded region width and doping concentration on valence band barrier height are studied. The simu- lated results closely accord with the experiment results.
【Fund】: 国家自然科学基金资助项目(60276033 69889601);; 国家“863”高技术计划资助项目(2002AA312070);; 国家“973”计划资助项目(G20000683-02);; 北京市自然科学基金资助项目(4021001)
【CateGory Index】: TN248
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【Co-citations】
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