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《Semiconductor Technology》 2005-07
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Electron Beam Evaporation Deposited ZAO Thin Films by Orthogonal Experiment

GUO Ai-yun, XUE Yi-yu, XIA Zhi-lin, ZHU Xuan-min, GE Chun-qiao {School of Material and Engineering, Wuhan University of Technology, Wuhan 430070, China)  
The ZnO:Al(ZAO) thin films were prepared by electron beam evaporating deposition (EBED). Orthogonal experiments were used to analyze the effect of main factors (film thickness, deposition rate, substrate temperature) on the properties (transmissivity, resistivity) of the films. The experiment showed when deposition rate was 1.0 nm/s, film thickness was 800nm, and substrate temperature was 250℃, the properties of thin films were good and the deposition system work steadily.
【CateGory Index】: TN304;
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