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《Semiconductor Technology》 2006-08
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Study of Surface Lattice Transform of Epitaxial GaN-Based Films by Using RHEED

LANG Jia-hong1,QIN Fu-wen2,GU Biao2 (1.School of Electrical Engineering & Information , Anhui University of Technology Maanshan 243002, China; 2.Department of Electrical Engineering and Applied Electronics, Dalian University of Technology, Dalian 116024, China)  
Based on the relation to images of RHEED for situ monitoring growth of GaN-based epitaxy film and surface feature of epitaxy film, the transformation of the crystal lattice of growing surface of epitaxy film from RHEED images in different processes, such as hydrogen-nitrogen plasma cleaning and nitridation of sapphire substrate was given. The result indicated that RHEED was ad- vance for monitoring the growth of epitaxy film in situ, but also was a strongly tool for analyzing the crystal lattice transformation of epitaxy film.
【Fund】: 安徽省教育厅青年教师资助项目(2005jq1073)
【CateGory Index】: TN304.05
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