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《Semiconductor Technology》 2006-10
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Optical and Electrical Characteristics of Al Doped Zinc Oxide Thin Films Prepared by Sol-Gel

LI Shi-ping,LI Ling (Physical Department of Jinan University,Guangzhou 510632, China )  
Al-doped zinc oxide thin films were prepared by sol-gel technique on quartz substrates, followed by annealing in nitrogen ambient. The X-ray diffraction(XRD) patterns show that ZAO thin films has a hexagonal wurtzite structure. The optical and electrical characteristics of ZAO thin films were investigated. The results show that Raman spectrum and conductivity of the ZAO thin films had changed with different Al-doped ratio. The conductance of thin films which annealing at 700℃ was optimal .
【Fund】: 广东省自然科学基金资助项目(31785)
【CateGory Index】: TN304.05
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