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《Semiconductor Technology》 2007-04
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Carbon and Boron Residual Impurity Concentration Control in GaAs Crystal Grown by LEC

ZHOU Chun-feng,LIN Jian,GUO Xin,WU Yuan-qing,ZHANG Liang,LAI Zhanping(The 46th Research Institute,CETC,Tianjin 300220,China)  
In undoped semi-insulting(SI)GaAs crystals grown by LEC method,carbon and boron are two main residual impurities.The impurities influence SI character and performance of production.Based on the analyzing of incorporation and extraction mechanism of carbon and boron impurities in GaAs,adopting the measures of baking heater system,decreasing temperature of boric oxide encapsulated,controlling the water content in the boric oxide and growing crystal in As-rich GaAs melt etc,the control of carbon and boron residual impurity in GaAs crystal was achieved.
【CateGory Index】: TN304.23
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Chinese Journal Full-text Database 1 Hits
1 WEI LUNCUN LIU JINZHI LIANG BIN(Institute of Heavy Jan Physics,Peking University,Beijing, 100871)KOBZEV A P SHIROKOV D M(Joint Institute for Nuclear Research,Dubna,Russia, 141980);DETERMINATION OF THE LATTICE LOCATIONS OF BORON IN LEC GaAs BY CPAA/CHANNELING[J];Journal of Nuclear and Radiochemistry;1993-01
Chinese Journal Full-text Database 10 Hits
1 Qi Yunxin(Senior Engineer,46th Research Institute,inistry of Electronic Industry,P .C .Box 55 ,Tianjin 300192);Jiang Chunxiang;QUANTITATIVE STUDY OF AB MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs SINGLE CRYSTALS[J];ORDNANCE MATERIAL SCIENCE AND ENGINEERING;1995-03
2 LI Jian jun, LIAN Peng, DENG Jun, HAN Jun, GUO Wei ling, SHEN Guang di (Optoelectronic Technology Laboratory, Beijing Polytechnic University, Beijing 100022, CHN);High Mobility GaAs Intrinsic Epitaxial Layer Grown by MOCVD[J];Semiconductor Optoelectronics;2002-06
3 LI Jian-jun, HAN Jun, DENG Jun, XING Yan-hui, LIU Ying, SHEN Guang-di (Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, CHN);Carbon-doped GaAs Epitaxial Layer Grown by MOCVD[J];Semiconductor Optoelectronics;2004-04
4 XU Yong-qiang1,LI Xian-chen2,SUN Nie-feng1,YANG Guang-yao1,ZHOU Xiao-long1,XIE De-liang1,LIU Er-hai1,SUN Tong-nian1(1.13th Research Institute,CETC,Shijiazhuang 050051,China;2.71521-542 Factory,Xinxiang 453002,China);The study of Φ100mm sulfur doped InP single crystal growth[J];Semiconductor Technology;2004-03
5 ZHANG Bin-zhen1,2,LI Ke-jie1,ZHANG Wen-dong2,XUE Chen-yang2,CHEN Jian-jun2 (1. School of Mechanic-Electronic,Beijing Institute of Technology,Beijing 100081 China; 2.Key Lab of Instrumentation Science & Dynamic Measurement, North University of China, Ministry of Education, Taiyuan 030051,China);Micro-Machining Based on GaAs[J];Semiconductor Technology;2006-07
6 Zhao Youwen, Liu Silin, Sun Tongnian, Gao Shuzeng(The 13th Institute, Ministry of EI, Shijiazhuang, 050051);Large Quantity Synthesis of High Purity InP in the High Pressure Puller[J];;1993-04
7 Sun Niefeng,Chen Xudong,Yang Guangyao,Zhao Youwen, Xie Deliang,Liu Erhai,Liu Silin,Sun Tongnian (The 13th Institute(Electronics),Shijiazhuang 050051);Study of InP Materials Growth from Various Stoichiometric Melts[J];SEMICONDUCTOR INFORMATION;1999-04
8 Song Qunhou (Nanjing Electronic Devices Institute,Nanjing 210016);Influence of Melt Stoichiometry on Electrical Properties in Semi Insulating LEC GaAs[J];SEMICONDUCTOR INFORMATION;1999-06
9 Zhao Youwen,Chen Xudong,Sun Tongnian,Liu Silin,Yang Guangyao(The 13th Institu-te,Ministry of EI,Shijiazhuang ,050051);Analysis of the Twin Phenomenon in LEC-InP Crystal[J];SEMICONDUCTOR INFORMATION;1995-04
10 Li Guangping; Li Jing; Ru Qiongna(The 46th Institute, Ministry of EI,Tianjin, 300192);Study on the Measurement of SI-GaAs Wafer[J];SEMICONDUCTOR INFORMATION;1996-03
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