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《Semiconductor Technology》 2007-04
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Carbon and Boron Residual Impurity Concentration Control in GaAs Crystal Grown by LEC

ZHOU Chun-feng,LIN Jian,GUO Xin,WU Yuan-qing,ZHANG Liang,LAI Zhanping(The 46th Research Institute,CETC,Tianjin 300220,China)  
In undoped semi-insulting(SI)GaAs crystals grown by LEC method,carbon and boron are two main residual impurities.The impurities influence SI character and performance of production.Based on the analyzing of incorporation and extraction mechanism of carbon and boron impurities in GaAs,adopting the measures of baking heater system,decreasing temperature of boric oxide encapsulated,controlling the water content in the boric oxide and growing crystal in As-rich GaAs melt etc,the control of carbon and boron residual impurity in GaAs crystal was achieved.
【CateGory Index】: TN304.23
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