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《Semiconductor Technology》 2007-12
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Nonlinear Analysis on Drain Capacitance of 50 V LDMOS

ZHU Shao-bo,SUN Wei-feng,LI Hai-song,LU Sheng-li (National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)  
The relationship between nonlinear drain-capacitance Cd of LDMOS and the drain-source voltage Vds was researched at the aspect of device structure and process parameter by simulation.The influences of five parameters(the doses of the drift,the length of the field plate,the thickness of field oxide layer,the thickness of gate oxide layer,the doses of the channel) on the nonlinear Cd were discussed.The influence of drift depletion layer on the nonlinear Cd,and the influence of the five parameters on the drift depletion layer were analysed.The methods to improve the linearity of Cd were proposed.
【CateGory Index】: TN386.1
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