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《Semiconductor Technology》 2008-03
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Modeling and Verifying for Data Retention Capability of Metal Nanocrystal Memory Device

Gu Huaihuai,Cheng Xiulan,Shi Liang,Lin Kun (School of Microelectronics,Shanghai Jiaotong University,Shanghai 200240,China)  
In recent years,in the field of non-volatile memory research,metal nanocrystal memory with low-power,high-speed read and write characteristics and high reliability receives much attention.By comparison on the effects of quantum confinement and Coulomb blockade on Fermi level of metal nanocrystal,it is found that Coulomb blockade could seriously deteriorate the data retention capability of metal nanocrystal memory(MNCM)device.A new data retention model was proposed considering both quantum confinement and Coulomb blockade effect.The model is verified to be reasonable comparing with experimental datum from reference papers.
【CateGory Index】: TP333
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