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《Semiconductor Technology》 2008-04
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Numerical Study for High Efficiency 808 nm Laser Diode

Zhao Yihao1,2,Chen Hongtai2,Chen Guoying1,Yang Hongwei2,Zhao Run2,Peng Haitao1,2(1.Dept.Info.& Engi.,Hebei University of Technology,Tianjin 300401,China;2.The 13th Research Institute,CETC,Shijiazhuang 050051,China)  
By analyzing the conditions which can increase the power conversion efficiency(PCE)of diode,it is found that decreasing the work voltage,serial resistance and the threshold current can increase the PCE.The simulations on Ga0.5InP and AlxGaAs symmetric waveguide laser diodes were carried out respectively.The results show that the parameters of AlxGaAs material system(InGaAsP quantum well sandwiched by AlxGaAs waveguide and cladding)are better than that of Ga0.5InP material system(InGaAsP quantum well with Ga0.5InP waveguide and(AlxGa)0.5InP cladding).Based on the conditions the corresponding diodes are fabricated,the results of the simulation and the fabrication of the diodes show that increasing the doping density can reduce the work voltage and serial resistance;using graded material in the waveguide can reduce the threshold current,thus the PCE of the diodes is increased.
【Fund】: 国家部委基金资助项目
【CateGory Index】: TN248
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