Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Semiconductor Technology》 2008-08
Add to Favorite Get Latest Update

Preparation of ZnO/(Ni) Thin Film and Studies on Its Photoluminescence Properties

Gao Fei1, Wu Zaihua1, Liu Xiaoyan2(1. Hunan College of Information, Changsha 410200, China; 2. School of Material Science and Engineering, Central South University, Changsha 410083, China)  
ZnO/(Ni) thin films were prepared by DC reactive magnetron sputtering. The effects of oxygen partial pressures and Ni doped on the microstructure,photoluminescence properties and the concentration of some intrinsic defects in ZnO thin films such as oxygen vacancy(VO), zinc vacancy(VZn), antisite oxygen(OZn), antisite zinc(ZnO), interstitial oxygen(Oi) and interstitial zinc(Zni) were studied respectively. Experimental results show that the intensity of the blue photoluminescence peak at 466 nm increases with increasing the oxygen partial pressure; for the sample doped with Ni, the intensity of the blue peak increases as well. According to the analysis, it is suggested that the blue photoluminescence peak observed in ZnO thin films might be attributed to interstitial zinc.
【CateGory Index】: O484.4
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 1 Hits
1 Wu Zhong-Hao Xu Ming Duan Wen-Qian (Key Laboratory of Information Materials of Sichuan Province,School of Electrical and Information Engineering,Southwest University for Nationalities,Chengdu 610041,China);Effects of Fe doping on the crystal structures and photoluminescences of ZnO:Ni thin films prepared by sol-gel method[J];Acta Physica Sinica;2012-13
【Citations】
Chinese Journal Full-text Database 3 Hits
1 LIN BI-XIA 1)2) FU ZHU-XI 1)2) JIA YUN-BO 1) LIAO GUI-HONG 2) 1) (Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China) 2) (Department of Physics, University of Science and;THE ULTRAVIOLET AND GREEN LUMINESCENCE CENTERS IN UNDOPED ZINC OXIDE FILMS[J];Acta Physica Sinica;2001-11
2 Li Huo-Quan Ning Zhao-Yuan Cheng Shan-Hua Jiang Mei-Fu (School of Physical Science and Technology, Key Laboratory of Film Materials, Jiangsu Province,Suzhou 215006,China);Photoluminescence centers and shift of ZnO films deposited by rf magnetron sputtering[J];Acta Physica Sinica;2004-03
3 GAO Hai-yong, ZHUANG Hui-zhao, XUE Chen-shan, DONG Zhi-hua, HE Jian-ting, LIU Yi-an, WU Yu-xin, TIAN De-heng(Semiconductor Institute, Shandong Normal University, Ji'nan 250014, China);Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga_2O_3[J];中南工业大学学报(英文版);2005-01
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 LI Min,LIU Yan-mei,WANG Wei-na(Anhui Key Laboratory of Imformation Materials and Devices,Anhui University,Hefei 230039,China);Structure and photoluminescence properties of arrayed ZnCoO and ZnO nanorods[J];Journal of Anhui University(Natural Sciences Edition);2010-03
2 HU Chun-xiang,TAO Xiang-yang (School of Physics & Comm.Tech,Jiangxi Normal Univ.,Nangchang,330027,China);The Response and Absorption Characters of the PC-type HgCdTe Detector to the Irradiation of In-band and Off-band[J];Journal of Anqing Teachers College(Natural Science Edition);2006-04
3 HONG Wei-ming(Zhanjiang Normal College,Zhanjiang 524048,CHN);Preparation and Characteristics of ZnO∶Al Thin Films Prepared by Sol-gel Technique[J];Semiconductor Optoelectronics;2007-03
4 JIANG Min1, WU Dingcai1, WEI Qin1, LIU Fangshu2, WU Yannan1, ZHANG Peipei1, JI Hongxuan1, XU Ming1 (1. Institute of Solid State Physics & School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, CHN; 2. School of Material Engineering, Panzhihua University, Panzhihua 617000, CHN);Synthesis and Photoluminescence of Cu-doped ZnO Thin Films[J];Semiconductor Optoelectronics;2010-02
5 ZHANG Jianhua(Department of Physics,Xiangnan University,Chenzhou 423000,CHN);Effects of Sputtering Power on Structural and Photoelectric Properties of Co-ZnO Thin Films[J];Semiconductor Optoelectronics;2011-01
6 DUAN Wenqian1,XU Ming1,2,WU Yannan2,DONG Chengjun2,DU Maolu1(1.Key Lab.of Information Materials of Sichuan Province,School of Electrical and Information Engineering,Southwest University for Nationalities,Chengdu 610041,CHN;2.Institute of Solid State Physics,School of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610068,CHN);Effect of Cu Doping on the Photoluminescence of ZnO∶Co Thin Films Prepared by sol-gel Method[J];Semiconductor Optoelectronics;2011-01
7 WANG Qi-chun,HE Jian-guo(Microwave Center,Dept of Electronic Engineering,National UniversityDefence Technology,Changsha 410073, China);Design consideration of a new type of microwave photonic deviceMQW photon-microwave tansformer[J];Semiconductor Technology;2003-01
8 YANG Bing-chu,LIU Xiao-yan,GAO Fei(College of Physics Science and Technology,Central South University,Changsha,410083,China);Effect of Oxygen Partial Pressure on the Structure and Optical Properties of ZnO Thin Films[J];Semiconductor Technology;2007-06
9 Yang Bingchu,Zhang Li,Ma Xuelong,Yan Jiantang (School of Physics Science and Technology,Central South University,Changsha 410083,China);Effects of Oxygen Pressure on Absorption Property and the Structure of Mn-Doped ZnO Thin Film[J];Semiconductor Technology;2008-02
10 Xue Hua,Zhang Guoheng,Zhang Hao (Key Laboratory for Electronic Materials of the State National Affairs Commission of PRC,Northwest University for Nationality,Lanzhou 730030,China);Influence of Oxygen Partial Pressure on the Photoluminescence Properties of Nano ZnO Films[J];Semiconductor Technology;2009-02
China Proceedings of conference Full-text Database 5 Hits
1 LI Zhen,CHEN Wen,LI Fei, AI Chang-tao,JIN Fu-jiang ( School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China;Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province, Hubei University, Wuhan 430062, China; Faculty of Material Science and Chemical Engineering, China University of Geosciences, Wuhan 430074, China);Influences of Annealing Temperature on the Structure and Optics of ZnO Films[A];[C];2007
2 FAN Dong-hua, NING Zhao-yuan (School of Physical Science and Technology, Key Laboratory of Thin Film, Suzhou University, Suzhou 215006, China);Photoluminescence properties of Ge/ZnO multi-layer films deposited by radio frequency alternate sputtering[A];[C];2004
3 PAN Hong-xing~1,WANG Chong~1,XIONG Fei~1,ZHANG Xue-gui~1, YANG Jie~(1,2),LI Tian-xin~3,YANG Yu~1 (1.Institute of Optoelectronic Information Materials,Academy of Engineering and Technology,Yunnan University,Kunming 650091,China; 2.Faculty of Metallurgical and Energy Engineering,Kunming University of Science and Technology,Kunming 650093,China; 3.Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China);Influence of the growth temperature of Si buffer layers on Ge quantum dots[A];[C];2010
4 WANG Qi,ZHOU Dacheng,QIU Jianbei (School of Materials Science and Engineering,Kunming University of Science and Technology,Kunming 650093,China);Progress in Photoluminescence properties of Rare Earth Doped ZnO[A];[C];2011
5 LI Chengbin, Jia Tianqing, Xu Zhizhan, Feng Donghai, Sun Haiyi, Li Xiaoxi, Xu Shizhen Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800;A study on photoluminescence characterization of zinc oxide nanoparticle defects[A];[C];2004
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 FU Tianhua,GAO Qianqian,LIU Fei,DAI Huajun,KOU Xingming* College of Chemistry,Sichuan University,Chengdu 610064,Sichuan,China;Preparation of(Fe,Ni)-Codoped ZnO and Its Photocatalytic Activity for Degradation of Methyl Orange[J];Chinese Journal of Catalysis;2010-07
2 JIANG Jing-si, HOU Yan-bing, TANG Ai-wei, TENG Feng(Institute of Optoelectronic Technology,Beijing Jiaotong University, Beijing 100044, China);Zn_(1-x)Fe_xO Diluted Magnetic Semiconductor Fabricated with Sol-gel Method[J];Chinese Journal of Luminescence;2008-01
3 WANG Kai,ZHOU Zuo-wan,LIU Guo-mei,LI Yan-xia(Key Laboratory of Advanced Materials Technology Ministry of Education, School of Materials Science and Engineering,Southwest Jiaotong University,Chengdu 610031,China);Structural and green luminescent properties of Fe-doped T-ZnO[J];Journal of Functional Materials;2006-06
4 ZHOU Ting-ting,MA Shu-yi,MAO Lei-ming,DING Ji-jun,SHI Xin-fu(College of Physics and Electronic Engineering,Northwest Normal University,Lanzhou 730070,China);The influence of different Fe doping on ZnO films' luminescence performance[J];Journal of Functional Materials;2009-12
5 HE Yong-ning,WU Ming-tang,ZHU Chang-chun (Department of Electronic Science and Technology,School of Electronic and Information,Xi'an Jiaotong University,Xi'an 710049,China);Study on Crystal Defects of Undopped ZnO Semiconductor[J];Journal of Synthetic Crystals;2007-06
6 HU Zhi-gang1,ZHOU Xun1,2,XU Ming1,2,LIU Fang-shu3,DUAN Man-yi1,WU Ding-cai1,DONG Cheng-jun1,CHEN Shang-rong1,WU Yan-nan1,JI Hong-xuan1,LINGHU Rong-feng2(1.Institute of Solid State Physics,School of Physics and Electronic Engineering,Sichuan Normal University,Chengdu 610068,China;2.School of Physical and Electronic Science,Guizhou Normal University,Guiyang 550001,China;3.Department of Material Engineering,Panzhihua University,Panzhihua 617000,China);Preparation and Properties of ZnO Thin Films Doped with Fe and Ni by Sol-gel Method[J];Journal of Synthetic Crystals;2010-01
7 LIN BI-XIA 1)2) FU ZHU-XI 1)2) JIA YUN-BO 1) LIAO GUI-HONG 2) 1) (Structure Research Laboratory, University of Science and Technology of China, Hefei 230026, China) 2) (Department of Physics, University of Science and;THE ULTRAVIOLET AND GREEN LUMINESCENCE CENTERS IN UNDOPED ZINC OXIDE FILMS[J];Acta Physica Sinica;2001-11
8 Peng Xing Ping Lan Wei Tan Yong Sheng Tong Li Guo Wang Yin Yue (Department of Physics, Lanzhou University, Lanzhou 730000,China);Photoluminescent properties of Cu-doped ZnO thin films[J];Acta Physica Sinica;2004-08
9 Liu Xue-Chao~ 1)2) Shi Er-Wei~ 1) Song Li-Xin~ 1) Zhang Hua-Wei~ 1)2) Chen Zhi-Zhan~ 1) 1) (Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)2) (Graduate School of Chinese Academy of Sciences, Beijing 100049, China);Magnetic and optical properties of Co doped ZnO powders synthesized by solid-state reaction[J];Acta Physica Sinica;2006-05
10 Hu Zhi-Gang~1) Duan Man-Yi~ 1) Xu Ming~ 1)2) Zhou Xun~ 1)3) Chen Qing-Yun~ 1) Dong Cheng-Jun~ 1) Linghu Rong-Feng~ 3) 1)(Institute of Solid State Physics & School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China)2)(College of Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China)3)(Department of Physical and Electronic Science, Guizhou Normal University,Guiyang 550001, China);Electronic structure and optical properties of ZnO doped with Fe and Ni[J];Acta Physica Sinica;2009-02
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 HE Xiao-wen1,MENG Da-wei1,2,LIU Chang-zhen1, YU Xiao-hong1,CHEN Long1,XIE Jing1(1 Faculty of Material Science and Chemistry,China University of Geosciences,Wuhan 430074,China;2 State Key Laboratory of Inorganic Synthesis and Preparative Chemistry,College of Chemistry,Jilin University,Changchun 130012,China);Optical and Room-temperature Ferromagnetic Properties of ZnO and Fe Doped ZnO[J];Journal of Materials Engineering;2012-12
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved