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《Semiconductor Technology》 2010-02
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Study on the Influence and Optimization of Process Parameters of Tungsten Molybdenum Alloys in CMP

Bian Zheng,Wang Shengli,Liu Yuling,Xiao Wenming(Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China)  
The mechanism of metal chemical mechanical polishing(CMP) technology was discussed.The CMP technology in the semiconductor manufacturing process were expanded and applied to the surface processing of tungsten molybdenum alloys.The removal rate of tungsten molybdenum alloys was improved under the prerequisite of achieving the high flatness,low roughness requirements of tungsten molybdenum alloys material process.The alkali chemical polishing was used according to the properties of tungsten molybdenum alloys,optimized design of slurry pH,polishing pressure and plate rotation speed were carried out by Taguchi method,and the comprehensive optimized polishing parameter used in evaluating the removal rate were obtained. The experiment analysis results show that when the slurry pH is 11, the polishing pressure is 80 kPa and the plate rotation speed is 60 r/min,higher removal rate can be obtained.
【Fund】: 国家自然科学基金资助项目(10676008);; 河北省教育厅科学研究计划项目(2007429)
【CateGory Index】: TN305.2
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