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《Semiconductor Technology》 2011-07
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Studies of Explosion Reason in Process of Polycrystalline ZnGeP_2 Synthesis and Improvement of Techniques

Zhao Xin1,Zhu Shifu2,Cheng Jiang2(1.Graduate Department,Civil Aviation Flight University of China,Guanghan 618307,China;2.College of Materials Science and Engineering,Sichuan University,Chengdu 610064,China)  
The chemical reaction and the reason of explosion in process of polycrystalline ZnGeP2 synthesis were analyzed,and a new technique for prevention of the ampoule explosion was studied out.Explosion phenomena in process of polycrystalline ZnGeP2 synthesis were avoided successfully and the residual phosphorus were also separated from synthetic products availably by a modified single-temperature zone method with gradient descending temperature technique.The synthetic product are high-pure and single-phase ZnGeP2 polycrystals characterized by XRD and EDS.An integrity ZnGeP2 single crystal with a size of Φ20 mm×60 mm is obtained by vertical Bridgman method(VBM).
【Fund】: 国家自然科学基金(50732005);; 四川省科技厅资金(2010ZR0123)
【CateGory Index】: TN304.26
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【Citations】
Chinese Journal Full-text Database 8 Hits
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