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AlGaInP epitaxial materials for high bright LED with red,orange and yellow color

GUAN Xing-guo,YAN Zhen-bin,LIU Hui-sheng, LU Hong-xi,LI Zhi-qiang,LI Ai-gong (Huineng Power Electronics CO.,LTD.,ShiJiazhuang 050051,China)  
MOCVD growth and properties of AlGaInP/GaAs micro-structure materials for high bright LED are presented.It is shown that a detailed understanding of the structure design,misoriented substrates,DBR layer,GaP window layer and dopant incorporation is necessary to obtain high performance LED.The epitaxial materials with candela class output were successfully grown for red,orange and yellow LEDs.
【Fund】: 国家863高技术新材料领域资助项目! (86 3- 715 - Z34- 0 3- 0 1)
【CateGory Index】: TN304.054
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