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《Semiconductor Information》 2001-02
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Development of ZnO thin film doping and transition

CHEN Han hong,YE Zhi zhen (State Key Laboratory of Silicon Material,Zhejiang University,Hangzhou 310027,China)  
Undoped ZnO films resistance can be high as 10 12 Ω·cm and how to prepare high quality n type and p type films through doping is the key step for application.Researchers indicate n type film can be well prepared,however,due to the defects such as oxygen vacancy and zinc interstitial atoms,ZnO film is formed n typed naturally and p type is difficult to prepare.In this paper we summarize the recent advances in ZnO films doping and p type researching.
【Fund】: 博士学科点专项科研基金!(970 335 0 5 )
【CateGory Index】: TN305.3
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