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《Semiconductor Information》 2002-08
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Research development of Si-based light emitting material

WANG Ji 1 ,NING Yong-qiang 1 ,REN Da-cui 2 ,WANG Li-jun 1(1.Changchun Institute of Optics and Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun130021,China;2.Changchun Institute of Optics and Fine Mechanics,Changchun1  
The isoelectronic impurity,Er-doped silicon,Si-based quantum structure(including quantum well,quantum wire and quantum dot)and porous silicon luminescence are demonstrated.The progress of Si-based heterostructures since90s,including heterostructure materials,characteristics and future applications are re viewed.The emphasis is placed on the new characteristics and functions of Si-based heterostructures,which are introduced by energy band engineering.The preparation and luminescence mechanism of Si-based quantum dot are introduced chiefly.The latest progress and trend of semiconductor quantum dot materials are reviewed also.
【CateGory Index】: TN304.91
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