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《Semiconductor Information》 2002-11
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Proximity effects during mask fabrication

DU Jing-lei 1 ,SHI Rui-ying 2 ,CUI Zheng 3 ,GUO Yong-kang 1(1.Physics Department ,Sichuan University,Chengdu610064,China;2.Microelectronics R&D Center,The Chinese Academy of Scienes,Beijing100029,China;3.Rutherford Appleton Laboratory,Chilton,Didcot,Oxon OX110QX,UK)  
In this paper,we discuss the influence of the mask fabricated by EBL or laser writ-ing on pattern quality.Distortion effect in optical proximity corrected(OPC)masks on wafer level image has been investigated using combined simulation of photomask patterning process and pro-jection optical lithography.Proximity effects in e-beam lithography or laser direct writing have been taken into account for the generation of mask features.The simulation demonstrated that the OPC compensation features are significantly distorted at mask level.Such distortions have notice-able impact on the wafer level resist images.
【Fund】: 国家自然科学基金项目(69907003);; 博士点基金资助项目
【CateGory Index】: TN305.7
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Chinese Journal Full-text Database 1 Hits
1 Du Jinglei 1) Su Jingqin 1) Luo Kejian 2) Zhang Yixiao 1) Guo Yongkang 1) Cui Zheng 3) Zhou Chongxi 4) 1), Department of Physics, Sichuan University, Chengdu 610064 2), Neijiang Education Institute, Nei;Fine Correction of Optical Proximity Effect by Using Gray Tone Coding Mask[J];ACTA OPTICA SINICA;2000-04
Chinese Journal Full-text Database 3 Hits
1 SHI Rui-ying, GUO Yong-kang (Phys. Dept. Sichuan University, Chengdu 610064 China; Microelectronics Center, Academia Sinica, Beijing 100010, China);Optical proximity correction for improving pattern quality in submicron photolithography[J];Semiconductor Technology;2001-03
2 Shen Tingzheng1Lü Haibao1Gao Yiqing2Qi Xinmin2Luo Ningning2 1 Department of Instrument, National University of Defense Technology, Changsha 410073 2 Department of Measurement and Control, Nanchang Institute of Aeronautical Technology, Nanchang 330034;Research of Mask Division for Improving the Edge Sharpness of Photolithography[J];Acta Optica Sinica;2005-04
3 Shi Ruiying Guo Yongkang Zeng Yangsu Huang Xiaoyang (Phys.Dept.,Sichuan University,Chengdu 610064) (Microelectroic Research Cer.,As);Analysis of physical mechanism on optical proximity effect[J];LASER JOURNAL;2000-04
Chinese Journal Full-text Database 10 Hits
1 TIAN Yang-chao(National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China);SIMULATION OF PATTERN TRANSFER ACCURACY OF THE DEEP UV-LITHOGRAPHY[J];Journal of Anhui Normal University(Natural Science);2005-03
2 Song Dengyuan (Department of Electronics and Informational Engineering,Hebei University,Baoding 071002) Wang Xiaoping (Zhangjiakou Vocational University,Zhangjiakou 075000);Laser Holographic Lithography and Applications[J];SEMICONDUCTOR TECHNOLOGY;2000-02
3 ZHANG Wei,ZHANG Da-cheng,WANG Yang-Yuan (Institute of Microelectronics,Peking University,Beijing100871,China);Survey and development of MEMS[J];Semiconductor Information;2002-01
4 FENG Bo-ru 1 ,ZHANG Jin 1,2 ,ZONG De-rong 1 ,JIANG Shi-lei 1 ,SU Ping 1,2 ,CHEN Bao-qin 3 ,CHEN Fen 4(1.State Key Lab of Optical Technologies for Microfabrication,Institute of Optics&Electronics,Chinese Academy of S;Study of interferometric lithography without masks[J];Semiconductor Information;2002-03
5 ZHANG Hai xia,GUO Hui,XIAO Zhi yong,ZHOU Rong chun,HAO Yi long (Institute of Microelectronics,Peking University,Beijing 100871,China);The research and development of MEMS CAD tool IMEE[J];Micronanoelectronic Technology;2003-Z1
6 TIAN Xue hong 1,LIU Gang 1,TIAN Yang chao 1, ZHANG Xin yi 2,ZHANG Peng 1 (1 National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China; 2 Synchrotron Radiation Research Center,Fudan University,Shanghai 200433,China);Study on computer simulation of proximity lithography[J];Micronanoelectronic Technology;2003-Z1
7 LIU Shi-jie1,2,DU Jing-lei1,XIAO Xiao1,TANG Xiong-gui1,PENG Qin-jun1,LIU Jian-li1,GUO Yong-kang1(1.Department of Physics,Sichuan University,Chengdu 610064,China;2.Department of Physics,Shanxi University of Technology,Hanzhong 723001,China);Analysis of standing wave effect in photolithography[J];Micronanoelectronic Technology;2004-02
8 Wang Yangyuan and Kang Jinfeng(Institute of Microelectronics,Peking University,Beijing 100871,China);Development and Challenges of Lithography for ULSI[J];Chinese Journal of Semiconductors;2002-03
9 Chen Zhijin 1,Shi Zheng 1,Wang Guoxiong 2,Fu Ping 3 and Yan Xiaolang 1(1 Institute of VLSI Design,Zhejiang University,Hangzhou 310027,China) (2 College of Electronics and Information Engineering,Anshan Institute of Iron & Steel Technology,Anshan 1;A New Method of 2D Contour Extraction For Fast Simulation of Photolithographic Process[J];Chinese Journal of Semiconductors;2002-07
10 Liu Shijie 1,2 ,Du Jinglei1,Duan Xi1,Luo Boliang1,Tang Xionggui1, Guo Yongkang1,and Du Chunlei3(1 Physics Department of Sichuan University,Chengdu 610064,China) (2 Physics Department of Shanxi University of Technology,Hanzhong 723001,China) (3 State Key Laboratory of Optical Technology on Microfabrication,Chinese Academy of Sciences,Chengdu 610209,China);Enhanced Exposure Model and Its Parameter Measurements for Thick Photoresist[J];Chinese Journal of Semiconductors;2005-05
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 Du Jinglei Huang Qizhong Yao Jun Su Jingqin Guo Yongkang (Physics Departments, Sichuan University, Chengdu 610064) Cui Zheng (Rutherford Appleton Laboratory, U.K.) Shen Feng (Institute of Optics and Electronics, The Chinese Academ;OPC with Grey Level Mask and Its Computer Simulation Study[J];ACTA OPTICA SINICA;1999-05
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