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《Micronanoelectronic Technology》 2004-04
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Conducting mechanism and theory conductivity of antimony doped tin oxide

YANG Jian-guang,TANG Mo-tang,TANG Chao-bo,YANG Sheng-hai,ZHANG Bao-ping(School of Metallurgical Science and Technology,Central South University,Changsha 410083,China)  
The conducting mechanism of antimony doped tin oxide is sumed up. Oxygen vacanices and dopants,Sb5+,supply n-type charge carries to the conductibiliity of SnO2 are two conducting mechanisms. Using the formula of the materials conductibility,this paper also proves that there exists the optimum content of the Sb in ATO. Based on the exisitent mode,this paper also proves there is conductibility upper limit of ATO,the optimum dopant,Sb,in ATO is 1 49%(quality percent),the theory max conductibility of ATO is 0 217×104(Ω·cm)-1,The contribution of the oxygen vanccies to ATO conductibility is σ2=0 1506×104(Ω·cm)-1.
【Fund】: 国家重点自然科学基金项目(50234010)
【CateGory Index】: O484.4
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