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《Micronanoelectronic Technology》 2007-Z1
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Development of High Responsivity InGaAs PIN Photodetectors

WANG Cheng-dong1,YANG Ji2,FENG Shi-wei1,ZHANG Yue-zong1,ZHUANG Si-xiang1,ZHANG Gong-chang1 (1.School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100022,China 2.State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100080,China)  
In order to improve the detectors responsivity,the thickness of antireflective film and the shape of p-InP ohmic contact electrode were optimized on the basis of analyzing the factors effecting on responsivity.The device was implemented by MOCVD and closed-capsule diffusion method and the spectral response was measured.The detectors show perfect responsivity at wavelengths from 1000 nm to 1600 nm.At the wavelength of 1500 nm and at 5 V reverse bias,the responsivity is over 0.95A/W.
【Fund】: 北京市自然科学基金资助项目(21002015200501);; 教育部出国留学人员基金资助项目(63002015200401)
【CateGory Index】: TN36
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【Co-citations】
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