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《Micronanoelectronic Technology》 2008-10
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Progress in ZnO Nanowire and Nanodevice

Chen Xiaoban,He Ying,Zhang Wenfei(Department of Polymer Material,School of Material Science and Engineering,Shanghai University,Shanghai 201800,China)  
The properties of ZnO nanowire(NW)are introduced,and the principles and methods of preparing ZnO nanowires are reviewed,including vapor method,liquid method,template growth method,self-assemble method and so on.The statues of optoelectronic devices,pressure-sensitive devices and gas-sensitive devices based ZnO NW are described in detail,such as light-emitting diode(LED),solar cell,ultraviolet laser,nanogenerator and gas sensor.The difficulties resolved in practical application of ZnO NW devices,such as doped p-type ZnO,are analyzed.The tendencies of fluorescent probe,diluted magnetic semiconductor materials and quantum spin devices based ZnO NW are forecasted.It is indicated that the following researches will be focused on the defect formation and function mechanism of ZnO,preparation and application of ZnO NW fluorescent probe,research of ZnO NW superlattice and quantum well with different structures and its applications in quantum spin devices.
【Fund】: 上海市教委重点科研项目(078813)
【CateGory Index】: TB383.1
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