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《Micronanoelectronic Technology》 2013-02
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Research Progress of the Single-Layer MoS_2

Gu Weixia,Ma Xiying (School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215011,China)  
The single-layer molybdenum disulfide(MoS2) is a two-dimensional semiconductor with a direct band gap of 1.8 eV and has excellent physical and chemical properties from its special layered structure of the hexagonal system.Some main preparation methods of MoS2,such as the high-temperature vulcanization method,hydrothermal method and surfactant-assisted method are introduced,and the respective research status,advantages and disadvantages of various methods at home and abroad are discussed.Some applications of the single-layer MoS2,such as transistors,integrated circuits and logic operations are presented.The corresponding transistors have smaller volume and power consumption than that of Si transistors,can decrease the short channel effect,and the on/off current ratio exceeds 1010.All these applications show that MoS2 can be widely used in future nano-electron devices.Finally,the development directions of MoS2 in the future are prospected.The fabrication methods and the application fields of the single-layer MoS2 will be improved and expanded.
【Fund】: 国家自然基金项目(60976071);; 苏州市科技计划项目(SYG201121)
【CateGory Index】: TB383.1
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