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《SEMICONDUCTOR INFORMATION》 1995-05
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Rapidly Developing SiC Semiconductor Technology

Dang Jiping(The 13th Institute,Ministry of EI,Shijiazhuang,050051)  
The SiC semiconductor technology has developed rapidly in recent years.Comparing with other semiconductor materials,SiC has the highest figure of merit for the power and frequency performances because of its ther-mal and electronic properties.In addition,SiC is particularly well suited for high temperature and radiation hard applications.Structurally,SiC exists in a host of polytypes. The emphasis is placed on the characteristics of SiC and the results of recent developments in both crystal growth and device fabrication.Finally the application of SiC in the future is given.
【CateGory Index】: TN304.24
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【References】
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1 GUO Lei,NiING Shu-fan,YU Kai-kun, LI Hong-yan,ZHAO Li-hua,LIU Bin,CHEN Shou-tian (State Key Laboratory of Electrical Insulation for Power Equipment, Xi'an JiaoTong University,Xi'an710049,China);Study progress of silicon carbide non-linear property[J];绝缘材料;2005-03
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【Co-references】
Chinese Journal Full-text Database 2 Hits
1 Yang Huirong(Gansu Daxia Water Power Station);Corona Corrosion of the Hydrogenerator Stator Coil and Its Treatment Method[J];大电机技术;1996-01
2 Dang Jiping(The 13th Institute,Ministry of EI,Shijiazhuang,050051);Rapidly Developing SiC Semiconductor Technology[J];半导体情报;1995-05
【Secondary References】
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1 HU Chun-xiu;ZHAO Ying-nan;GAO Jun-guo;ZHANG Xiao-hong;Key Laboratory of Engineering Dielectrics and Its Application,Harbin University of Science and Technology;Harbin Research Institute of Large Electric Machinery;;Organic montmorillonite / silicon carbide micro-nano-crystalline composite anti-corona varnish[J];电机与控制学报;2015-10
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