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Rapidly Developing SiC Semiconductor Technology

Dang Jiping(The 13th Institute,Ministry of EI,Shijiazhuang,050051)  
The SiC semiconductor technology has developed rapidly in recent years.Comparing with other semiconductor materials,SiC has the highest figure of merit for the power and frequency performances because of its ther-mal and electronic properties.In addition,SiC is particularly well suited for high temperature and radiation hard applications.Structurally,SiC exists in a host of polytypes. The emphasis is placed on the characteristics of SiC and the results of recent developments in both crystal growth and device fabrication.Finally the application of SiC in the future is given.
【CateGory Index】: TN304.24
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Chinese Journal Full-text Database 2 Hits
1 GUO Lei,NiING Shu-fan,YU Kai-kun, LI Hong-yan,ZHAO Li-hua,LIU Bin,CHEN Shou-tian (State Key Laboratory of Electrical Insulation for Power Equipment, Xi'an JiaoTong University,Xi'an710049,China);Study progress of silicon carbide non-linear property[J];绝缘材料;2005-03
2 Li Ningsheng; Bao Ximao; Liao Liangsheng and Wu Xiaohua (Department of Physics, Nanjing University, Nanjing 210093)Gao Yihua and Zhang Ze (Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences, Beijing 100080);Preparation of Si-Based Nanocrystalline SiC and its Microstructure Analises[J];半导体学报;1997-10
Chinese Journal Full-text Database 2 Hits
1 Yang Huirong(Gansu Daxia Water Power Station);Corona Corrosion of the Hydrogenerator Stator Coil and Its Treatment Method[J];大电机技术;1996-01
2 Dang Jiping(The 13th Institute,Ministry of EI,Shijiazhuang,050051);Rapidly Developing SiC Semiconductor Technology[J];半导体情报;1995-05
【Secondary References】
Chinese Journal Full-text Database 8 Hits
1 HU Chun-xiu;ZHAO Ying-nan;GAO Jun-guo;ZHANG Xiao-hong;Key Laboratory of Engineering Dielectrics and Its Application,Harbin University of Science and Technology;Harbin Research Institute of Large Electric Machinery;;Organic montmorillonite / silicon carbide micro-nano-crystalline composite anti-corona varnish[J];电机与控制学报;2015-10
2 CHEN Qingguo;HOU Shuai;CHI Minghe;WANG Yonghong;WEI Xinlao;Key Laboratory of Engineering Dielectrics and Its Application,MOE,Harbin University of Science and Technology;;Electric Field Distribution in Converter Transformer Outlet Device and Its Insulation Structure Optimization[J];高电压技术;2013-12
3 Sun Yongxin1,2,Zhang Dapeng2,Zheng Wei2(1.State Key Laboratory of Hydropower Equipment,Harbin 150040,China;2.Harbin Institute of Large Electric Machinery,Harbin 150040,China);Testing Technique Study of Surface Resistivity of Anti-Corona Material and Parameter Extraction[J];绝缘材料;2012-06
4 Zhang Hongtao,Xu Zhongyang,Zou Xuecheng,Wang Chang'an, Zhao Bofang,Zhou Xuemei and Zeng Xiangbing(Department of Electron Science and Technology,Huazhong University of Science and Technology,Wuhan 430074,China);Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films[J];半导体学报;2002-07
5 WU Chun-yu1,2, SHEN Gui-fen2, WANG Ying2, ZHU Chang-chun1, LI Yu-kui1, BAI Ji-bin3 (1. School of Electronic Information Engineering ,Xi'an Jiao Tong University, Xi'an 710049, China; 2. Physical Department , Liao Ning University,;Study on preparation and properties of SiC buried layer[J];功能材料与器件学报;2002-01
6 ZHANG Yu ming 1,ZHANG Yi men 1,P Alexandrov 2 and J H Zhao 2(1 Institute of Microelectronics,Xidian University,Xi'an 710071,China) (2 Department of Electrical and Computer Engineering,The State University of New Jersey,NJ 08854 8058,USA);Fabrication of 4H-SiC Merged PN-Schottky Diodes[J];半导体学报;2001-03
7 WU Chunyu, WANG Ying, LIU Xinghui, HUANG Heluan Department of Electronic Science and Engineering, Liaoning University, Shenyang Liaoning 110036;A Simple Study of β-SiC in C~+-implanted Silicon[J];辽宁大学学报(自然科学版);2000-01
8 Xie Erqing 1,2) Wang Zhiguang 1) Jin Yunfan 1) 1) (Institute of Modern Physics, the Chinese Academy of Sciences, Lanzhou 730000) 2) (Department of Physics, Lanzhou University, Lanzhou 730000);Study of Quantum Optoelectronic Material Prepared by Ion Implantation[J];原子核物理评论;1998-03
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