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《Chinese Journal of Semiconductors》 1986-01
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Study of IR Absorption and Content Measurements of Carbon in GaAs at Room Temperature

Jiang Desheng/Instttute of Semiconductors, Academia SinicaSong Chungying/Instttute of Semiconductors, Academia SinicaZheng Jiefei/Instttute of Semiconductors, Academia SinicaHsu Cbenchia/Instttute of Semiconductors, Academia Sinica  
Temperature dependence of carbon-induced localized vibration mode(LVM) IR abso-rption are studied and changes of lineshape,frequeucy position and absorption inten-sity of the LVM absorption band are observed.It is shown that the half-width of theLorentzian line-shaped absorption band is quite narrow (about 1 cm~(-1)), which is mainlydetermined by the nearest-neighbor effect of Ga isotopes as the disappearence of thefine structure of the LVM absorption band at room temperature due to temperaturebroadening of absorption lines.From this experimental indication,a method is des-cribed for measuring carbon content in GaAs at room temperature.In addition,thecarbon content of LEC GaAs single crystals with different growth conditions is alsostudied and discussed.
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Chinese Journal Full-text Database 3 Hits
1 Jiang Desheng/Institute of Semiconductors, Academia SinicaSong Chunyin/Institute of Semiconductors, Academia SinicaZheng Jiefei/Institute of Semiconductors, Academia SinicaXu Zhenjia/Institute of Semiconductors, Academia Sinica;Temperature Dependence of LVM Absorption Induced by Carbon in GaAs[J];Chinese Journal of Semiconductors;1987-01
2 Cai Shaoqin (Beijing General Research Institute for Non-ferrous Metals);A Review : Analysis of Semiconductor Materials[J];Chinese Journal of Analysis Laboratory;1988-Z1
3 ZHOU BINGLIN, WU ZHENG, CHEN ZHENGXIU, HU BINGHUA (Shanghai Institute of Metallurgy, Academia Sinica) (Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica);COMPENSATION MECHANISM OF UNDOPED SEMI-INSULATING GaAs[J];;1988-02
Chinese Journal Full-text Database 1 Hits
1 Xu Zhen-jia Chen Yu-zhang Jiang De-sheng Song Chun-ying (Institute of Semiconductors, Academia Sinica) Li He-cheng Song Xiang-fang (Institute of Nonferous Metals, Ministry of Metallurgy) Ye Yi-ying (Department of Physics, Wuhan University);INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES[J];Acta Physica Sinica;1980-07
Chinese Journal Full-text Database 4 Hits
1 Xu Zhenjia/Institute of Semiconductors, Chinese Academy of Sciences Jiang Desheng/Institute of Semiconductors, Chinese Academy of Sciences Song Chunying/Institute of Semiconductors, Chinese Academy of Sciences Sun Bokang/Institute of Semiconductors, Chinese Academy of Sciences Lin Jiangxia/Institute of Semiconductors, Chinese Academy of Sciences;Measurement of Oxygen and Carbon Content in Silicon by Ratio Spectrum[J];Chinese Journal of Semiconductors;1981-02
2 He Xiukun/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192Wang Qin/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192Li Guangping/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192Yan Ping/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192Ru Qiongna/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192Li Xiaobo/Tianjin Electronic Materials Research Institute P. O. Box 55, Tianjin,300192;Measurements of Carbon Content and Temperature Character in Silicon with Low-temperature Infrared Spectra[J];Chinese Journal of Semiconductors;1992-11
3 Ma Bilan, Zhu Jinbin, Wu Jiangen Zhang Jichang, Zhou Shoutong, Qu Fengyuan(Physics Department, Fudan University, Shanghai 200433, China;Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China;Physics Department,Tongji University, Shanghai 200092, China;Shanghai No. 17 Radio Factory, Shanghai 200010, China);FTIR STUDY OF OXYGEN IN SILICON[J];Journal Infrared Millimeter and Waves;1992-04
4 LI YUeZHEN SHen JINYUaN REN NING WANG QIMIN{Shanghai Institute of Metallurgy, Academia Sinica);78 K INFRARED ABSORPTION METHOD FOR MEASURING THE OXYGEN CONTENT IN SILICON[J];Journal of Applied Sciences;1985-02
Chinese Journal Full-text Database 10 Hits
1 Li Yuezhen/Shanghai Institute of Metallurgy, Academia SinicaHe Huannan/Shanghai Institute of Metallurgy, Academia SinicaZhao Guandi/Shanghai Institute of Metallurgy, Academia SinicaYan Ronghua/Shanghai Institute of Metallurgy, Academia SinicaLu Qingren/Shanghai Institute of Metallurgy, Academia SinicaQi Mingwei/Shanghai Institute of Metallurgy, Academia SinicaZhang Jiading/Shanghai Institute of Metallurgy, Academia SinicaHua Zhifen/Shanghai Institute of Metallurgy, Academia Sinica;A Calibration Curve for Measuring Oxygen Content in Single Crystal Silicon by 9μm Infrared Absorption Method[J];Chinese Journal of Semiconductors;1983-01
2 He Zhizhuang Kong Lingxian Pan Hongqi Zhao Chunhua Yang Zhongyou Miao Hualun Zhang Zhen Teng Aiju (General Research Institute of Non-ferrous Metals,Ministry of Metallurgical Industry);Choice of Parameters of inductively Coupled Plasma and Its Analytical Application[J];Chinese Journal of Analytical Chemistry;1981-01
3 Xu Guanghui Shen Hanxi (Department of Chemistry,Nankai University);Spectrophotometrie Determination of Microamounts of Tin with Salicylfluorone and Cetyltrimethylammortium Bromide in Metal Materials[J];Chinese Journal of Analytical Chemistry;1982-06
4 Cui Wancang Shi Huiming (Department of Chemistry, Nankai University);Fluorimetric Determination of Microamounts of Scandium with 8-Hydroxyquinoline-5-sulfonic Acid and Cetyltrimethylammonium Bromide[J];Chinese Journal of Analytical Chemistry;1983-10
5 He Kelun Lu Shiyan (Shanghai Institute of Ceramics,Academia Sinica);DETERMINATION OF NITROGEN IN AMORPHOUS SILICON NITRIDE FILMS BY ELECTROLYTIC CONDUCTIVITY METHOD[J];Chinese Journal of Analytical Chemistry;1987-07
6 Yang Jinfu, Pei Aili, and Huang Benli~* (Changchun Institute of Applied Chemistry, Academia Sinica);SOME OBSERVATIONS ON ICP EXCITATION TEMPERATURE MEASUREMENTS AND EFFECTS OF ETHANOL ON ICP EXCITATION[J];Chinese Journal of Analytical Chemistry;1987-09
7 Zhuang Jinying, Wang Dongjin and Shu Hong (Department of Chemistry, Fuzhou University, Fuzhou) Pan Qinghong (Department of Chemistry, Zhongshan University, Guangzhou);SPECTROPHOTOMETRIC STUDY OF MULTICOMPONENT COMPLEX WITH BERYLLIUM-4, 5-DIBROMOPHENYLFLUORONE -CTMAB -TWEEN-60[J];Chinese Journal of Analytical Chemistry;1987-10
8 Ye Ruqiu, Jiang Mienheng, Lu Huiyun, Liu Jiguan (Chinese Academy of Environmental Sciences);Micro Sampling Method in ICP-AES[J];Spectroscopy and Spectral Analysis;1984-03
9 Cuo Yonglian, Chu Zhunlin (Changchun Institute of Optics and Fine Mechanics, Academia Sinica);Spectral and Chemical Analysis for Micro-Area and Thin Layer[J];Spectroscopy and Spectral Analysis;1984-03
10 Xu Xuemin,Li Xiyun,Cui Xianhang (Institute of Semiconductors, Academia Sinica);Determination of Trace Silicon by Flameless AAS[J];Spectroscopy and Spectral Analysis;1984-04
【Secondary References】
Chinese Journal Full-text Database 2 Hits
1 Li Guangping, He Xiukun, Wang Qin, Zheng Ju and Yan Ping (Tianjin Electronic Materials Research Institute);Low-Temperature Fine Structure and Optical Quenchina Effect of EL2 in SI-GaAs[J];Research & Progress of Solid State Electronics;1989-02
2 Yang Ruixia Li Guangping WangQin;The Characteristics of Near-infrared Absorptionin GaAs and the Measurement of the Concentration ofthe Main Deep Electron Trap[J];;1991-02
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