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《Chinese Journal of Semiconductors》 1986-05
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Influence of Carbon on the Defect Generation in IG Silicon Wafers

Tan Songsheng/Shanghai Institute of Metallurgy, Academia SinicaShen Jinyuan/Shanghai Institute of Metallurgy, Academia SinicaLi Yuezhen/Shanghai Institute of Metallurgy, Academia Sinica  
The influence of carbon on the defect formation during oxygen intrinsic gettering(IG) process has been studied for CZ silicon.It is found that IG defects are fewer forwafers containing higher carbon concentration, Although the precipitation rate of oxy-gen at 750℃ is higher for the same sample.During the temperature treatment at 750℃,the wafers containing higher carbon concentration appear to precipitate the oxygen andcarbon simultaneously and to form C-O eomplexes.This kind of oxygen precipitationwill be dissolved at temperatures higher than 900℃, so it does not contribute to the ge-neration of IG defects. This paper conducts some interesting results to indicate that the SiO_x complexes ge-nerated in the low temperature dominate the nucleation centers of IG defects.The re-ason for fewer defects in the IG wafer having higher carbon concentration is that car-ben impedes the generation of SiO_x complexes-the nucleation centers of IG defects-atthe low temperature.
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【Citations】
Chinese Journal Full-text Database 2 Hits
1 Li Yuezhen/Shanghai Institute of Metallurgy, Academia SinicaHe Huannan/Shanghai Institute of Metallurgy, Academia SinicaZhao Guandi/Shanghai Institute of Metallurgy, Academia SinicaYan Ronghua/Shanghai Institute of Metallurgy, Academia SinicaLu Qingren/Shanghai Institute of Metallurgy, Academia SinicaQi Mingwei/Shanghai Institute of Metallurgy, Academia SinicaZhang Jiading/Shanghai Institute of Metallurgy, Academia SinicaHua Zhifen/Shanghai Institute of Metallurgy, Academia Sinica;A Calibration Curve for Measuring Oxygen Content in Single Crystal Silicon by 9μm Infrared Absorption Method[J];Chinese Journal of Semiconductors;1983-01
2 Zhang Yixin/Institute of Semiconductors, Academia SinicaCheng Meiqiao/Institute of Semiconductors, Academia SinicaZhang Zehua/Institute of Semiconductors, Academia SinicaLiu Shuqin/Institute of Semiconductors, Academia Sinica;Oxygen and Carbon Precipitation in Silicon Crystal with High Contents of Oxygen and Carbon and Secondary Defects Formed by the Precipitation[J];Chinese Journal of Semiconductors;1984-01
【Co-citations】
Chinese Journal Full-text Database 6 Hits
1 Zhang Yixin/Institute of Semiconductors, Academia SinicaCheng Meiqiao/Institute of Semiconductors, Academia Sinica;Behavior and Main Origin of Heat-Induced Microdefects at the Surface of Si Wafer[J];Chinese Journal of Semiconductors;1985-03
2 Zhang Yixin/Institute of Scmiconductors, Academia Sinica;Effect of Fe on Oxygen and Carbon Precipitations in Silicon[J];Chinese Journal of Semiconductors;1987-03
3 Zhang Yixin/Institute of semiconductors chinese Academy of SciencesLi Chaoyong/Institute of semiconductors chinese Academy of SciencesLi Guangping/The 46th institute of Mechnics and electronic industry departme(?)stHe Xiukun/The 46th institute of Mechnics and electronic industry departme(?)stLu Cungang/Atomic Academy of SciencesLi Zuhua/The 605th factory Beijing;Influence of Oxygen and Carbon in CZNTD Silicon on Behavior of Defect-Impurity Complex[J];Chinese Journal of Semiconductors;1992-07
4 Cai Shaoqin (Beijing General Research Institute for Non-ferrous Metals);A Review : Analysis of Semiconductor Materials[J];Chinese Journal of Analysis Laboratory;1988-Z1
5 Ni Qing-sai; Wang Sin-pin, Shanghai No. 16 Semiconductor Device Factory;Preliminarg Investigation on the Applitation of Comprehensive Imparity Gettoriog Techniqne to the Linear Integratad Circuit[J];;1986-02
6 LI YUeZHEN SHen JINYUaN REN NING WANG QIMIN{Shanghai Institute of Metallurgy, Academia Sinica);78 K INFRARED ABSORPTION METHOD FOR MEASURING THE OXYGEN CONTENT IN SILICON[J];Journal of Applied Sciences;1985-02
【Co-references】
Chinese Journal Full-text Database 2 Hits
1 Zhang Yixin/Institute of Semiconductors, Academia SinicaCheng Meiqiao/Institute of Semiconductors, Academia SinicaZhang Zehua/Institute of Semiconductors, Academia SinicaLiu Shuqin/Institute of Semiconductors, Academia Sinica;Oxygen and Carbon Precipitation in Silicon Crystal with High Contents of Oxygen and Carbon and Secondary Defects Formed by the Precipitation[J];Chinese Journal of Semiconductors;1984-01
2 Zhang Yixin/Institute of Scmiconductors, Academia Sinica;Effect of Fe on Oxygen and Carbon Precipitations in Silicon[J];Chinese Journal of Semiconductors;1987-03
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 ZHANG Hong-di, LIU Cai-chi(Institute of Semiconductors, Hebei University of Technology, Tianjin 300130,China);Development on oxygen precipitation in heavily-doped Si[J];Semiconductor Technology;2004-06
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