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《Chinese Journal of Semiconductors》 1986-05
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Measurements of H Content in GD a-Si_(1-x)C_x:H Doped with B or P

Chen Guanghua/Department of Physics, Lanzhou UniversityZhangFangqing/Department of Physics, Lanzhou UniversityXu Xixiang/Department of Physics, Lanzhou UniversityT. Shimizu/Department of Electronics, Kanazawa University  
The influence of doping with boron or phosphorus on hydrogen bonding property inGD a-Si_(1-x)C_x:H (x=0.2) alloy films is studied by IR spectra.The contents of hydro-gen in the films are analysed quantitatively.
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