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《Chinese Journal of Semiconductors》 1988-03
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Analysis of pH-ISFET Temperature Characteristics and Temperature Compensation Approaches

Wang Guihua/Harbin Institute of Technology, HarbinYu Dun/Harbin Institute of Technology, HarbinWang Yaolin/Harbin Institute of Technology, Harbin  
The temperature characteristics of a pH-ISFET testing circuit are analysed and the ex-pression of the device temperature drift is given. A new concept "Zero T. C. operatingpoint" and a method "Zero T. C. adjustment" have been proposed. Experimental data showthat both "Zero T. C. adjustment" and "Differential compensation configuration of transistorpair" can effectively reduce the temperature drift of the output voltage to 1-2 orders less thanthe original one.
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Wang Guihua/Harbin Institute of Technology, HarbinYu Dun/Harbin Institute of Technology, HarbinWang Yaolin/Harbin Institute of Technology, Harbin;Operational Mechanism of pH-ISFET and Temperature Characteristics of Interfacial Potential Developed between Ion Sensitive Film and Electrolyte Solution[J];Chinese Journal of Semiconductors;1988-03
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Yu Dun/Harbin Institute of Technology, Harbin, 150006Wei Yadong/Harbin Institute of Technology, Harbin, 150006Wang Guihua/Harbin Institute of Technology, Harbin, 150006;Output Characteristics of pH-ISFET with Si_3N_4 as Ion Sensitive Film[J];Chinese Journal of Semiconductors;1991-04
2 ;The Probe Techniques for electric microarea-testing[J];;1996-02
3 Wu Shixiang,Yu Dun,Wang Guihua (Harbin Institute of Technology);Chemical Sensors[J];Journal of Transducer Technology;1991-01
4 Yu Dun Wang Guihua Wu Shixiang(Harbin Institute of Technology);Chemical Sensors[J];Journal of Transducer Technology;1991-05
5 Hou Chenggui(Hebei University);A CMOS Full-Wave Rectifying Circuit which can Improve Converting Precision for Small Signals[J];TRANSACTIONS OF CHINA ELECTROTECHNICAL SOCIETY;1995-04
6 Jin Gongjiu, Sun Guoliang (Nanjing Institute of Technology);A Study on MOS Bootstrapping Circuits from Source and Drain[J];Research & Progress of Solid State Electronics;1985-01
7 GAO Yong~1 ZHANG Xin~ 1,2 LIU Mengxin~1 AN Tao~1 WANG Cailin~1 XING Kunshan~2( ~1 Xi′an University of Technology,Xi′an, 710048,CHN)( ~2 East China Institute of Photo-Electron IC,Bengbu,Anhui,233042,CHN);Research on SOI Self-heating Effect Based on the Method of Equivalent Capacitance[J];Research & Progress of SSE Solid State Electronics;2006-04
8 Liu Yuling Liu Zhifu;The Analysis and Research of SubstrateMaterial for MOS.CCD.VLSl[J];;1988-02
9 Xu Weijie Liu Lu;An Experiment Investigation of Field-Effect Transistors In the Region of Law Temperature[J];Journal of Natural Science of Heilongjiang University;1993-01
10 Zhou Zhiren Wan Jiqing Wu Zhuowen Liu Fangming(Department of Applied Physics,Hunan Univ);Logic Design for Four Characteristic CMOS D-Type Flip-Flop[J];JOURNAL OF HUNAN UNIVERSITY(NATURNAL SCIENCES);1994-04
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 Yu Dun WU Shixiang Wang Yaolin Zhang Yuliang;Ion Sensitive Field Transistor for pH Measurement[J];Journal of Harbin Institute of Technology;1985-A8
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