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《Chinese Journal of Semiconductors》 1989-01
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Investigation of G-R Noise Induced by Defects in P-N Junetion of Bipolar Transistor

Dai Yisong/Jilin University of Technology, Changchun  
The measurements of bipolar transistors demonstrate that at room temperamure,the g-rnoise has a wide region of time constant and a large amplitude.The author gives the theoryof the g-r noise induced by the defects in the p-n junction of bipolar transistor,and calculatesthe time constant and amplitude of the g-r noise,giving a satisfactory elucidation for theproperty of the g-r noise.
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