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《Chinese Journal of Semiconductors》 1989-09
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Statistical Analysis for the Sensitivity of Polysilicon Piezoresistance

Zhao Ganming/Department of Electronic Engineering,Fudan UniversityBao Minhang/Department of Electronic Engineering,Fudan University  
The statistical analysis for the piezoresistive sensitivity of pclysilicon thin film with specialprtferential orientations is presented. Both n-type and p-type average grain piezoresistive coef-ficients of polysilicon with the preferential orientations of 100、110、111、211、311 and 331 have been caculated. By using these results and x-ray texture ofpolysilicon, the sensitivity of polysilicon piezoresistance has been obtained.To verify the theo-retical results,the experimental devices are made at the center of a rectangular diaphragm.The experimental results agree with the expected theoretical analysis. Therefore, these resultsare very useful for the design of polysilicon piezoresistive pressure sensors.
【Fund】: 传感技术联合开放研究实验室支持的课题
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