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《Chinese Journal of Semiconductors》 1989-09
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Statistical Analysis for the Sensitivity of Polysilicon Piezoresistance

Zhao Ganming/Department of Electronic Engineering,Fudan UniversityBao Minhang/Department of Electronic Engineering,Fudan University  
The statistical analysis for the piezoresistive sensitivity of pclysilicon thin film with specialprtferential orientations is presented. Both n-type and p-type average grain piezoresistive coef-ficients of polysilicon with the preferential orientations of 100、110、111、211、311 and 331 have been caculated. By using these results and x-ray texture ofpolysilicon, the sensitivity of polysilicon piezoresistance has been obtained.To verify the theo-retical results,the experimental devices are made at the center of a rectangular diaphragm.The experimental results agree with the expected theoretical analysis. Therefore, these resultsare very useful for the design of polysilicon piezoresistive pressure sensors.
【Fund】: 传感技术联合开放研究实验室支持的课题
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【References】
Chinese Journal Full-text Database 1 Hits
1 Wang Shanci(The 49th Research Institute of the Ministry of Electronics Industry);Sensing Technology Based on Polycrystalline Silicon (Serial Four)[J];Journal of Transducer Technology;1994-04
【Citations】
Chinese Journal Full-text Database 2 Hits
1 Wang Yan/Institute of Microelectronics Fudan UniversityBao Minhang/Institute of Microelectronics Fudan UniversityJin Qi/Institute of Microelectronics Fudan University;Effect of Shear Stress on the Sensitivities of Piezoresistors[J];Chinese Journal of Semiconductors;1986-05
2 Bao Minhang, Wang Yan (Electronic Engineermg Department);TRANVERSE PIEZORESISTIVE PRESSURE SENSORS AT CENTER OF SILICON DIAPHRAGM[J];Journal of Fudan University;1986-03
【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Bao Minhang/Department of Electronic Engineering, Fudan UniversityQi Weijia/Department of Electronic Engineering, Fudan UniversityWang Yan/Department of Electronic Engineering, Fudan University;Geometric Effect of Transverse-Voltage Pressure Transducer's Sensitivity[J];Chinese Journal of Semiconductors;1987-04
2 ZHU Mu-cheng, XIA Ji (Dept. of Electromechanical Engineering, Southwest Ins. of Tech., Miangyang 621002, China) ZHANG Li-hong (Luoyang College of Higher Professional Training, Luoyang 471000, China) LIU Qiang (No. 403 Research Office, CARDC, Mianyang 622;Research on the Properties of Piezoresistive Transducer[J];ORDNACE INDUSTRY AUTOMATION;2000-02
3 YU Shang-jiang~(1,2),YANG Ji-xiang~2,LI Ke-jie~1 (1.School of Mechatronic Engineering,Beijing Institute of Technology,Beijing 100081,China;2.The Third Engineer Scientific Research Institute of the Headquarters of the General Staff,Luoyang 471023,Henan,China);Development of a Ytterbium Foil Stress Sensor and Its Experimental Research[J];Acta Armamentarii;2006-04
4 Wu Xianping Hu Meifeng (Electronic Engineering Department, Fudan University);A Study on Improving Performance of Diffuse Silicon Pressure Sensors[J];Journal of Transcluction Technology;1992-03
5 Shen Guifen Wang Zhengrong(Dept. of Electronic Science and Engineering, Liaoning Univ. Shen Yang, 110036);The Analyses of Sensitivity Characteristic for Pressure Resistance Sensor[J];Journal of Transcluction Technology;1996-04
6 Wang Shanci(The 49th Research Institute of the Ministry of Electronics Industry);Sensing Technology Based on Polycrystalline Silicon (Serial Four)[J];Journal of Transducer Technology;1994-04
7 Shen Guifen (Deptartment of Electronic Science and Engineering,Liaoning University,Shenyang 110036);Analyses of Sensitivity Characteristic for Piezoresistive Sensor[J];JOURNAL OF TRANSDUCER TECHNOLOGY;1999-04
8 Hou Chenggui (College of Electron and Information Engineering,Hebei University,Baoding 071002;Pressure Sensor Made of Two Piezoresistive Half-Bridges for Cancelling Thermal Zero Shift[J];Journal of Transducer Technology;1999-05
9 Niu Defang(Dalian University of Technology);Design of C-type Pressure Sensors[J];JOURNAL OF TRANSDUCER TECHNOLOGY;1995-01
10 Xu Dehua; Zhu Bing(Beijing Institute of Technology);The Selective Design of Thin Semiconductors Films Bridge for Pressure Sensors[J];JOURNAL OF TRANSDUCER TECHNOLOGY;1995-06
【Co-references】
Chinese Journal Full-text Database 1 Hits
1 Zhao Ganming Bao Minhang (Fudan University);Statistical Analsis of The Sensitivity of Polysilicon Transverse Piezoresistance[J];Journal of Transcluction Technology;1989-02
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 ZHANG Wei,WANG Yang-yuan (Institute of Microelectronics,Peking University,Beijing 100871,China);Research on Poly-Silicon Integrated Pressure Sensor for High Temperature[J];Acta Electronica Sinica;2003-11
【Secondary Citations】
Chinese Journal Full-text Database 1 Hits
1 Bao Minhang, Wang Yan;PRESSURE SENSOR BASED ON TRANSVERSE PIEZORESISTIVE EFFECT OF SILICON[J];Journal of Fudan University;1985-03
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