Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Chinese Journal of Semiconductors》 1992-12
Add to Favorite Get Latest Update

A New Method for Revealing Defects in GaAs/AlGaAs——Ultrasonic Aided AB Etching

Chen Nuofu/Hebei Institute of Technology.Tianjin,300130  
A New Method for revealing various defects in GaAs/AlGaAs by means of UltrasonicAided AB Etching (USAB) is presented in this paper. The emergent dislocations, dislocationlines, stacking faults, microdepositions, and growth-induced striations can all be revealed withthis method under natural light and room temperature.
【Fund】: 国家自然科学基金
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
【References】
Chinese Journal Full-text Database 4 Hits
1 Xu Yuesheng 1,Zhang Chunling 1,Liu Caichi 1,Tang Lei 1,Wang Haiyun 1 and Hao Jingchen 2(1 Information Function Institute,Hebei University of Technology,Tianjin 300130,China) (2 The 13th Electrons Institute of the Ministry of Information Industry,Shijiazhuang 050051,China);Crystal Defects in Semi-Insulation Gallium Arsenide[J];Chinese Journal of Semiconductors;2003-07
2 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
3 Liang Xiuhong Jiang Weihong Ju Yulin;Reliability Analysis of Revealing GaAs Crystal Defect[J];JOURNAL OF HEBEI UNIVERSITY OF TECHNOLOGY;1998-04
4 Liu Hongyan Sun Weizhong Wang Na Hao Qiuyan Liu Caichi(Institute of Information Function Materials,Hebei University of Technology,Tianjin 300130);Investigation of the native defects in LEC SI-GaAs by optical microscopy[J];Modern Instruments;2008-03
【Co-references】
Chinese Journal Full-text Database 10 Hits
1 Qi Yunxin(Senior Engineer,46th Research Institute,inistry of Electronic Industry,P .C .Box 55 ,Tianjin 300192);Jiang Chunxiang;QUANTITATIVE STUDY OF AB MICROSCOPIC DEFECTS IN SEMI-INSULATING GaAs SINGLE CRYSTALS[J];ORDNANCE MATERIAL SCIENCE AND ENGINEERING;1995-03
2 Zou Deshu,Lian Peng,Yin Tao,Li Shuang,Liu Ying, Gao Guo,Luo Ji,Du Jinyu,Shen Guangdi (Department of Electrical Engineering,Beijing Polytechnic University,Beijing 100022);Study of the Current Spreading Effect on Carbon Doped GaAs Lasers[J];SEMICONDUCTOR TECHNOLOGY;1999-06
3 XIE Zi-li(Nanjing Electronic Device Institute,Nanjing 210016,China);Investigation on the annealed behavior of the deep level trap in LEC SI-GaAs[J];Semiconductor Technology;2002-07
4 ZHOU Chun-feng,LIN Jian,GUO Xin,WU Yuan-qing,ZHANG Liang,LAI Zhanping(The 46th Research Institute,CETC,Tianjin 300220,China);Carbon and Boron Residual Impurity Concentration Control in GaAs Crystal Grown by LEC[J];Semiconductor Technology;2007-04
5 Zhang Ronggui, Li Anping(The 13th Institute, Ministry of MEI, Shijiazhuang, 050051);Photoluminescence Spectra and Quality Characterization of SI-GaAs[J];;1993-03
6 Li Guangping; Li Jing; Ru Qiongna(The 46th Institute, Ministry of EI,Tianjin, 300192);Study on the Measurement of SI-GaAs Wafer[J];SEMICONDUCTOR INFORMATION;1996-03
7 Cao Fu-nian/Institute of Semiconductors, Aeademia Sinica;A METHOD OF ANODIC ETCHING FOR REVEALING VARIOUS DEFECTS IN N~+-GaAs[J];Chinese Journal of Semiconductors;1980-01
8 Fan Tiwen/Institute of Semiconductors, Chinese Academy of SciencesHe Hongjia/Institute of Semiconductors, Chinese Academy of SciencesBai Yuke/Institute of Semiconductors, Chinese Academy of SciencesFei Xueying/Institute of Semiconductors, Chinese Academy of Sciences;ELECTRON MICROSCOPY STUDY OF MICRODEFECTS OF HEAVILY TELLURIUM-DOPED GALLIUM ARSENIDE[J];Chinese Journal of Semiconductors;1980-04
9 He Hongjia/Institute of Semiconductors, Chinese Academy of Sciences Cao Funian/Institute of Semiconductors, Chinese Academy of Sciences Fan Tiwen/Institute of Semiconductors, Chinese Academy of Sciences Bai Yuke/Institute of Semiconductors, Chinese Academy of Sciences Fei Xueying/Institute of Semiconductors, Chinese Academy of Sciences Wang Fenglian/Institute of Semiconductors, Chinese Academy of Sciences;Investigation of Microdefects and Microprecipitates in Te-Doped GaAs[J];Chinese Journal of Semiconductors;1981-01
10 Wu Ju; He Hongjia; Fan Tiwen and Wang Zhanguo(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083)Zhang Mian(13th Research Institute of MMEI, Shijiazhuang 050051);Influence of Dislocations in SI GaAs on the Side Gating Effect of MESFETs[J];CHINESE JOURNAL OF SEMICONDUCTORS;1997-07
【Secondary References】
Chinese Journal Full-text Database 4 Hits
1 Xu Yuesheng 1,Fu Shenghui 1,Liu Caichi 1,Wang Haiyun 1,Wei Xin 1,and Hao Jingchen 2(1 Heibei University of Techonology,Tianjin 300130,China)(2 No.13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China);Influence of AB Microdefects in LEC Semi-Insulating GaAs Substrate on Property of MESFET[J];Chinese Journal of Semiconductors;2005-01
2 Yu Huiyong Zhao Youwen,Zhan Rong,Gao Yongliang,and Hui Feng(Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China);Defects and Properties of Low Dislocation Si-Doped GaAs Single Crystal Grown by the VGF Method[J];Journal of Semiconductors;2008-09
3 Sun Weizhong, Niu Xinhuan, Wang Haiyun, Liu Caichi, Xu Yuesheng (Hebei University of Technology, Tianjin 300130, China);Study on Impurity and Micro-Defects of ND-SI-GaAs[J];Rare Metal Materials and Engineering;2006-10
4 DAI Hui-ying1,2,MA De-ming1,SHI Wei1(1.Faculty of Sciences,Xi'an University of Technology,Xi'an 710048,China;2.Faculty of Sciences,Air Force Engineering University,Xi'an 710051,China);Research on Response Property of Ultra-Short Electrical Pulse of Semi-Insulting GaAs Photoconductive Switches[J];Journal of Xi'an University of Technology;2007-03
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved