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《CHINESE JOURNAL OF SEMICONDUCTORS》 1997-07
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Influence of Dislocations in SI GaAs on the Side Gating Effect of MESFETs

Wu Ju; He Hongjia; Fan Tiwen and Wang Zhanguo(Laboratory of Semiconductor Materials Science, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083)Zhang Mian(13th Research Institute of MMEI, Shijiazhuang 050051)  
GaAs MESFETs were fabricated on LEC grown semi-insulating (SI) GaAs substrates with different dislocation densities and sidegating effect measurement was performed on the GaAs MESFETs. It was found that sidegating effect in the MESFETs fabricated on the GaAs substrate of high dislocation was obviously reduced.
【Fund】: 国家自然科学基金
【CateGory Index】: TN304
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【References】
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1 Xu Yuesheng 1,Zhang Chunling 1,Liu Caichi 1,Tang Lei 1,Wang Haiyun 1 and Hao Jingchen 2(1 Information Function Institute,Hebei University of Technology,Tianjin 300130,China) (2 The 13th Electrons Institute of the Ministry of Information Industry,Shijiazhuang 050051,China);Crystal Defects in Semi-Insulation Gallium Arsenide[J];Chinese Journal of Semiconductors;2003-07
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