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《CHINESE JOURNAL OF SEMICONDUCTORS》 1999-03
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PTC Effect of Y\|Doped BaTiO_3 Thin Film Prepared by Sol\|Gel Process

Gong Jian 1, Fu Xiaorong 2, Song Shigeng 1, Tan Hui 1, Tao Mingde 1(1 Xinjiang Institute of Physics, Chinese Academia of Science, Urumqi 830011) (2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Th  
This paper reports the PTC effect of Y\|doped BaTiO 3 thin film on Pt/Ti/Si(100) substrates by using sol\|gel processes. We chose barium acetate and tetrabuyyl titanate as precursors. The solvent system is ethylene glycol\|methoxyethanol\|methanol\|water, appended acetylacetone as chelating agents and polyethylene glycol as surfactant. The R\|T characteristic of thin film is measured. The PTC resistivity ratio is over 10 4. The temperature of PTCR jump is about 138℃ and the temperature region is about 2℃.
【CateGory Index】: TN304.055
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