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《CHINESE JOURNAL OF SEMICONDUCTORS》 1999-08
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Growth of GaN Single Crystal Film on ZnO/Al\-2O\-3 Substrate and Its Characteristics

Mao Xiangjun, Yang Zhijian, Li Jing, Qu Jianqin, Zhang Guoyi(Physics Department,Peking University, Beijing\ 100871) Ye Zhizhen, Li Jianguang, Wang Lei, Zhao Binhui(State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou\ 310027)Receive  
It is reported that GaN was grown on ZnO/Al\-2O\-3 substrate by LP\|MOCVD,and its characteristics were studied.The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer.The main photoluminescence peak of GaN epitaxial layer moves to blue spectrum,which has been confirmed that diffusing of Zn in ZnO layer into GaN is responsible.The diffusion coefficient of Zn in GaN at 1050℃ is valued as 8 6×10 -14 cm\+2/s.
【Fund】: 国家自然科学基金
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